The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

A technique is described for deposition of gold nanoparticles under vacuum, enabling
consistent energy referencing of X-ray photoelectron spectra obtained from lanthanum …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

The properties of oxides with high-dielectric constant are being extensively studied for use
as gate oxides. The criteria for choosing such oxides is discussed. The bonding at Si–oxide …

Rare-earth oxides as dielectric materials may find their most important use in
microelectronics as gate oxides in transistors. This paper reviews the literature on rare-earth …

Further scaling of complementary metal oxide semiconductor gate stacks will require gate
dielectrics with a higher dielectric constant (K) than HfO 2⁠. We point out that this will require …

From experimental literature data on metal oxides combined with theoretical estimates, we
present empirical relations for k-values and energy band offset values, that can be used in …