Oxidation studies of SiC are reviewed and analyzed in terms of thermodynamics by crossing
the high temperature behavior of the SiC material-mainly the activities of its components …

Silicon carbide materials are excellent candidates for high-performance applications due to
their outstanding thermomechanical properties and their strong corrosion resistance. SiC …

Abstract Hi‐Nicalon™‐S SiC fiber strengths and Weibull moduli were measured after
oxidation for up to 100 hours between 700° C and 1400° C in wet and dry air. SiO2 scale …

For a better understanding of the SiC oxidation mechanism, we investigated differences in
the oxidation process for surfaces with different crystal orientations. Real-time observations …

This work presents a new thermodynamically consistent model for thermo-chemo-
mechanical processes in open systems comprised of nonlinear elastic solids that are …

The impact of high-temperature sub-atmospheric oxidation pressure on the interface
properties of n-type 4H-SiC metal–oxide–semiconductor capacitors has been systematically …

We have attempted to establish a unified theory of SiC oxidation by reproducing all the SiC
oxide growth rates on the (0 0 0 1) Si-face,(1 1$\bar {2} $0) a-face and (0 0 0$\bar {1} $) C …

Growth kinetics of nanometer-thick thermal oxides on 4H-SiC (0001), Si-face, was
investigated. A linear oxide growth was clearly observed in this thickness region, indicating …

Silicon carbide nanowires (SiCNWs) have attracted increasing attention due to their
excellent properties and wide range of potential applications. SiCNWs covered with oxide …

Abstract Hi‐Nicalon™‐S SiC fiber was heat treated for 1 hour at 1300° C, 1400° C, and
1500° C in argon with pO 2 of 3.7, 10, 20, 50, 100, and 200 ppm. Fiber strengths were …