Taking into account a wide variety of recent results from studies of silicon crystal growth and
high temperature wafer heat treatments, a consistent picture of intrinsic point defect behavior …

Aluminum as the fastest diffusing acceptor dopant in silicon is commonly used for the
fabrication of power semiconductors with p–n junction depths ranging from some microns to …

A new kind of silicon wafer and a new class of materials engineering techniques for silicon
wafers is described. This wafer, called the “Magic Denuded Zone” or MDZ wafer, is …

Phosphorus-doped Czochralski-grown silicon (Cz-Si) has been gaining market share in the
large-scale manufacturing of high-efficiency silicon (Si)-based photovoltaic (PV) devices …

The increase and reduction of the vacancy concentration by rapid thermal processing (RTP)
was investigated by platinum diffusion. Direct experimental evidence is presented for the …

Silicon wafers, coated with a silicon nitride layer and subjected to high temperature Rapid
Thermal Annealing (RTA) in Ar, show—upon a subsequent two-step precipitation anneal …

In this work, we report a simple and efficient purification technique of solar grade silicon
wafers suitable for high efficiency and low-cost silicon solar cells. This gettering method …

This work was initially intended to examine the effect of rapid thermal annealing (RTA) on
the generation of thermal donors (TD) in silicon in the temperature range 450 to 500C. RTA …

One of the most remarkable phenomena in the early days of silicon technology was the
“emitterpush” effect which causes an enhanced diffusion of dopants below regions with high …

Vacancy depth profiles in silicon wafers—installed by Rapid Thermal Annealing and
monitored by Pt diffusion—show, upon subsequent annealing at 975 or 950 C, a peculiar …