Quantum optical memory for entanglement distribution

Y Lei, F Kimiaee Asadi, T Zhong, A Kuzmich, C Simon… - Optica, 2023 - opg.optica.org
Optical photons are powerful carriers of quantum information, which can be delivered in free
space by satellites or in fibers on the ground over long distances. Entanglement of quantum …

Cavity-enhanced emission from a silicon t center

F Islam, CM Lee, S Harper, MH Rahaman, Y Zhao… - Nano Letters, 2023 - ACS Publications
Silicon T centers present the promising possibility of generating optically active spin qubits
in an all-silicon device. However, these color centers exhibit long excited state lifetimes and …

High-efficiency single photon emission from a silicon T-center in a nanobeam

CM Lee, F Islam, S Harper, MA Buyukkaya… - ACS …, 2023 - ACS Publications
Color centers in Si could serve as both efficient quantum emitters and quantum memories
with long coherence times in an all-silicon platform. Of the various known color centers, the T …

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

A Ristori, M Khoury, M Salvalaglio… - Advanced Optical …, 2024 - Wiley Online Library
Light‐emitting complex defects in silicon have been considered a potential platform for
quantum technologies based on spin and photon degrees of freedom working at telecom …

Optical-transition parameters of the silicon center

C Clear, S Hosseini, A AlizadehKhaledi, N Brunelle… - Physical Review …, 2024 - APS
The silicon T center's narrow, telecommunications-band optical emission, long spin
coherence, and direct photonic integration have spurred interest in this emitter as a spin …

Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO

V Niaouris, SH D'Ambrosia, C Zimmermann… - Optica …, 2024 - opg.optica.org
Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-
bound exciton. This spin–photon interface enables applications in quantum networking …

Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes

P Udvarhelyi, P Narang - arXiv preprint arXiv:2409.10746, 2024 - arxiv.org
Defect emitters in silicon are promising contenders as building blocks of solid-state quantum
repeaters and sensor networks. Here we investigate a family of possible isoelectronic …

Hopping of the center-of-mass of single G centers in silicon-on-insulator

A Durand, Y Baron, P Udvarhelyi, F Cache… - arXiv preprint arXiv …, 2024 - arxiv.org
Among the wealth of single fluorescent defects recently detected in silicon, the G center
catches interest for its telecom single-photon emission that could be coupled to a metastable …

Millisecond electron spin coherence time for erbium ions in silicon

IR Berkman, A Lyasota, GG de Boo… - arXiv preprint arXiv …, 2023 - arxiv.org
Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile
platform for quantum information processing that can leverage the well-established silicon …

Unwanted couplings can induce amplification in quantum memories despite negligible apparent noise

FK Asadi, J Kumar, J Ji, K Heshami… - arXiv preprint arXiv …, 2024 - arxiv.org
Theoretical quantum memory design often involves selectively focusing on certain energy
levels to mimic an ideal $\Lambda $-configuration, a common approach that may …