Silicon T centers present the promising possibility of generating optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and …
Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T …
Light‐emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom …
The silicon T center's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin …
V Niaouris, SH D'Ambrosia, C Zimmermann… - Optica …, 2024 - opg.optica.org
Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor- bound exciton. This spin–photon interface enables applications in quantum networking …
Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here we investigate a family of possible isoelectronic …
A Durand, Y Baron, P Udvarhelyi, F Cache… - arXiv preprint arXiv …, 2024 - arxiv.org
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable …
Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon …
Theoretical quantum memory design often involves selectively focusing on certain energy levels to mimic an ideal $\Lambda $-configuration, a common approach that may …