Recent progress in solution‐based metal oxide resistive switching devices
Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
[HTML][HTML] Research progress of plasmonic nanostructure-enhanced photovoltaic solar cells
Enhancement of the electromagnetic properties of metallic nanostructures constitute an
extensive research field related to plasmonics. The latter term is derived from plasmons …
extensive research field related to plasmonics. The latter term is derived from plasmons …
Asymmetric GaN/ZnO engineered resistive memory device for electronic synapses
The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect
in a crossbar array. Similarly, this work focused on the material and design concept to …
in a crossbar array. Similarly, this work focused on the material and design concept to …
Schottky diode based resistive switching device based on ZnO/PEDOT: PSS heterojunction to reduce sneak current problem
To realize an asymmetric function blockable sneak currents in the resistive switching
memory device, we propose a novel schottky diode based high charge density resistive …
memory device, we propose a novel schottky diode based high charge density resistive …
[HTML][HTML] Threshold Voltage based Dual Memristor Crossbar PUF
IoT security plays a crucial role where smart devices are interconnected and one of these
can give an intrusion access to the network if they are not secured. Physical unclonable …
can give an intrusion access to the network if they are not secured. Physical unclonable …
Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
Resistive switching and anisotropic optical properties have been investigated in two-phase
HfO2: CeO2 nanocomposite thin films of different HfO2: CeO2 ratios of 3: 1, 1: 1, and 1: 3 on …
HfO2: CeO2 nanocomposite thin films of different HfO2: CeO2 ratios of 3: 1, 1: 1, and 1: 3 on …
Bipolar resistive switching device based on N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/poly …
We propose a novel bilayer resistive switching device based on N, N′-bis (3-methylphenyl)-
N, N′-diphenylbenzidine (TPD) and poly (3, 4-ethylenedioxythiophene)-poly …
N, N′-diphenylbenzidine (TPD) and poly (3, 4-ethylenedioxythiophene)-poly …
Graphene oxide-based random access memory: from mechanism, optimization to application
Y Xie, M Qi, X Xiu, J Yang, Y Ren - Journal of Physics D: Applied …, 2022 - iopscience.iop.org
Abstract According to Moore's Law's development law, traditional floating gate memory is
constrained by charge tunneling, and its size is approaching the physical limit, which is …
constrained by charge tunneling, and its size is approaching the physical limit, which is …
Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array
S Lee, J Kim, S Kim - Frontiers of Physics, 2024 - Springer
The emerging nonvolatile memory, three-dimensional vertical resistive random-access
memory (VRRAM), inspired by the vertical NAND structure, has been proposed to replace …
memory (VRRAM), inspired by the vertical NAND structure, has been proposed to replace …
[HTML][HTML] Temporal multibit operation of dynamic memristor for reservoir computing
D Ju, S Kim - Results in Physics, 2024 - Elsevier
The exponential growth of data in our society following the fourth industrial revolution has
exposed the limitations of existing technologies. The current computing architecture …
exposed the limitations of existing technologies. The current computing architecture …