Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …

In this letter, we report the realization of sub-10-nm diameter vertical nanowire (VNW) p-type
tunnel FETs (TFETs). Using a broken-band GaSb/InAsSb heterostructure design and a top …

We present experimental data for a vertical, 22-nm-diameter InAs/(In) GaAsSb nanowire
Tunnel Field-Effect Transistor that exhibits the highest reported I60 of, paving the way for low …

Tunneling field-effect transistors (TFETs) have emerged as a potential candidate to
outperform conventional metal-oxide-semiconductor FETs at low voltages, since their …

In this article, a novel planar InAs/GaSb heterojunction face-tunneling FET (HFTFET) is
proposed for device performance improvement. As is known in previous studies, the entire …

In this work, we review progress in III-V transistor technologies. Key approaches for silicon
integration are described, with a distinction being made between large area layer transfer …

Source engineering is an emerging technique to achieve steep-slope switching FET. To
bridge the new carrier filtering mechanism and device performance, a multiscale simulation …

Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐
Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal …

Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for
design of low power circuits. In spite of this potential, circuits based on TFETs have not been …

We systematically fabricate devices and analyze data for vertical InAs/(In) GaAsSb nanowire
tunnel field-effect transistors (TFETs), to study the influence of source dopant position and …