Effect of drain induced barrier enhancement on subthreshold swing and off-state current of...

Performance Enhancement of Cylindrical Surrounding Gate JL-MOSFET with HfO2 Spacer

T Tajour, N Abdullah, R Saha, S Sultana… - … on Computer and …, 2023 - ieeexplore.ieee.org
This study explores the significant impact of integrating a III-V compound, such as GaAs, in
tandem with HfO 2 spacer and proposes a Cylindrical Surrounding Gate Junctionless …
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New Approaches for Modeling Nanoscale Junctionless FETs: Device and Circuit-Level Performance Assessment

H Ferhati, T Berghout, F Djeffal - Circuit Design for Modern Applications - taylorfrancis.com
Submicron MOSFETs have played a crucial role in advancing microelectronics technology
from the latter portion of the 20th century onward, serving as a foundation for today's Ultra …
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