In the present research article, we have proposed an analytical compact model for nanowire
Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor's operation …

The purpose of this study is to investigate the possibilities of the junction-less double-gate
(JLDG) MOSFET structure with gallium nitride (GaN) channel material to overcome the …

This work is intended to design a quadrature phase shift keying (QPSK) system starting from
the device design, characterization and optimization which is then followed by the circuit …

Complementary metal-oxide-semiconductor (CMOS) technology has reached its physical
and technical limits during the last few years, and as a consequence, various architectures …

In this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) has been
investigated. Junctions and doping concentration gradients are unavailable in JLFET …

Two-dimensional materials are very promising for ultra-short channel future devices. This
paper investigates, for the first time, the viability of the junction less transistors based on 2-D …

Two-dimensional materials are very promising for ultra-short channel future devices. This
paper investigates, for the first time, the viability of the junction less transistors based on 2-D …

Experimental realization of low-dimensional heterostructures is a challenge owing to
complex structural requirements and ultrathin thickness of the nanolayers. Material …

An analytical threshold voltage model is presented to observe the change in threshold
voltage shift ΔV th of a junctionless double gate MOSFET using ferroelectric-metal-SiO 2 as …

We report here a study on doping concentration variation on Double Gate Junctionless Field
Effect Transistor. Doping concentration for the device is varied from 1010/cm3 to 1019/cm3 …