Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
Informing quantum materials discovery and synthesis using X-ray micro-computed tomography
The presence of inclusions, twinning, and low-angle grain boundaries, demanded to exist by
the third law of thermodynamics, drive the behavior of quantum materials. Identification and …
the third law of thermodynamics, drive the behavior of quantum materials. Identification and …
Treatment of Groundwater-Rich Organic Compounds Using Activated Carbon with Additional Germanium Dioxide (GeO2): Kinetics and Adsorption Studies of …
Y Fajriani, H Heryanto, D Tahir - ACS omega, 2023 - ACS Publications
Activated carbon/GeO2 composites were synthesized using the sol–gel method and then
used as catalysts for the photodegradation of organic pollutants methylene blue (MB) and …
used as catalysts for the photodegradation of organic pollutants methylene blue (MB) and …
[HTML][HTML] Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-
efficient power-electronics devices. Their wider band gaps result in higher breakdown …
efficient power-electronics devices. Their wider band gaps result in higher breakdown …
Deep Ultraviolet Transparent Electrode: Ta-Doped Rutile Sn1–xGexO2
Y Nagashima, M Fukumoto, M Tsuchii… - Chemistry of …, 2022 - ACS Publications
Transparent conductive oxides (TCOs) are key materials for highly efficient optoelectronic
devices such as light-emitting diodes (LEDs) and photovoltaic cells. While high-performance …
devices such as light-emitting diodes (LEDs) and photovoltaic cells. While high-performance …
Band-gap engineering of rutile-structured alloy system
H Takane, Y Ota, T Wakamatsu, T Araki, K Tanaka… - Physical Review …, 2022 - APS
Rutile-structured germanium oxide (r-GeO 2), an ultrawide band-gap (UWBG)
semiconductor, is a promising candidate for future high-power electronics because of its …
semiconductor, is a promising candidate for future high-power electronics because of its …
Establishment of a growth route of crystallized rutile GeO2 thin film (≧ 1 μm/h) and its structural properties
H Takane, K Kaneko - Applied Physics Letters, 2021 - pubs.aip.org
Recently, rutile germanium dioxide (r-GeO 2) has emerged as a novel ultra-wide bandgap
semiconductor due to its theoretical excellent properties, that is, high thermal conductivity …
semiconductor due to its theoretical excellent properties, that is, high thermal conductivity …
Computational identification of ternary wide-band-gap oxides for high-power electronics
As electricity grids become more renewable energy compliant, there will be a need for novel
semiconductors that can withstand high power, high voltage, and high temperatures …
semiconductors that can withstand high power, high voltage, and high temperatures …
A p-type dopable ultrawide-bandgap oxide
A major shortcoming of ultrawide-bandgap (UWBG) semiconductors is unipolar doping, in
which either n-type or p-type conductivity is typically possible, but not both within the same …
which either n-type or p-type conductivity is typically possible, but not both within the same …
Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties
In this paper, we report the direct growth of ultra-wide bandgap GeO 2 film on the m-plane
sapphire substrate by pulsed laser deposition. Raman scattering and x-ray diffraction …
sapphire substrate by pulsed laser deposition. Raman scattering and x-ray diffraction …