Contribution to the Tb-Doped AlNxOy: H/c-Si (p) Interface Study Using Surface Photovoltage (SPV) Techniques for Potential Photovoltaic Applications
JAD Carbajal, R Grieseler - 2023 - search.proquest.com
Abstract Hydrogenated Aluminum Oxynitride (AlN x O y: H) is a versatile material for the
surface passivation of crystalline silicon (c-Si). The capability of having positive or negative …
surface passivation of crystalline silicon (c-Si). The capability of having positive or negative …