High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor
G Wang, D Liu, S Fan, Z Li, J Su - Nanotechnology, 2021 - iopscience.iop.org
In this work, high-dielectric-constant (high-k) erbium oxide (Er 2 O 3) film is fabricated using
the spin coating method, and annealed at a series of temperatures (from 400 C to 700 C) …
the spin coating method, and annealed at a series of temperatures (from 400 C to 700 C) …
Flexible and stretchable inorganic solar cells: Progress, challenges, and opportunities
N El-Atab, MM Hussain - MRS Energy & Sustainability, 2020 - cambridge.org
This review focuses on state-of-the-art research and development in the areas of flexible
and stretchable inorganic solar cells, explains the principles behind the main technologies …
and stretchable inorganic solar cells, explains the principles behind the main technologies …
Enhanced Aramid/Al2O3 interfacial properties by PDDA modification for the preparation of composite insulating paper
F Lv, X Lu, J Song, M Zhu, S Wang, Y Xu… - Research on Chemical …, 2022 - Springer
To further improve the electrical insulation properties of meta-aramid paper,
polydimethyldiallyl ammonium chloride (PDDA) was used for the modification of nano-Al2O3 …
polydimethyldiallyl ammonium chloride (PDDA) was used for the modification of nano-Al2O3 …
ZrO 2 atomic layer deposition into Sr 0.5 Sm 0.5 CoO 3− δ–Ce 0.9 Gd 0.1 O 2− δ solid oxide fuel cell cathodes: mechanisms of stability enhancement
The application of atomic layer deposition (ALD) on solid oxide fuel cell (SOFC) cathodes
has previously yielded mixed results and has been seen to depend on the ALD species …
has previously yielded mixed results and has been seen to depend on the ALD species …
Nano-scale transistors for interfacing with brain: design criteria, progress and prospect
Abstract According to the World Health Organization, one quarter of the world's population
suffers from various neurological disorders ranging from depression to Alzheimer's disease …
suffers from various neurological disorders ranging from depression to Alzheimer's disease …
Atomic layer-deposited Ta 2 O 5− x nano-islands for charge trapping memory devices
S Sun, L Gao, P Han, L Zhu, WM Li… - Journal of Materials …, 2024 - pubs.rsc.org
Charge trapping memory (CTM) boasts numerous advantages over conventional flash
memory, making it a suitable alternative. In this work, atomic layer-deposited Ta2O5− x nano …
memory, making it a suitable alternative. In this work, atomic layer-deposited Ta2O5− x nano …
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory
Memory stacks for charge trapping cells have been produced exploiting Al-doped HfO2,
Al2O3, and SiO2 made by atomic layer deposition. The fabricated stacks show superior …
Al2O3, and SiO2 made by atomic layer deposition. The fabricated stacks show superior …
Nanoislands-based charge trapping memory: a scalability study
Zinc-oxide (ZnO) and zirconia (ZrO 2) metal oxides have been studied extensively in the
past few decades with several potential applications including memory devices. In this work …
past few decades with several potential applications including memory devices. In this work …
Methanol templated synthesis of ordered lamellar superstructured zirconia and its outstanding hierarchical thermostabilities
Q Chen, C Liu, X Ji, C Liu, Y Zhao, Z Fang - Ceramics International, 2019 - Elsevier
Ordered lamellar superstructured zirconia (OLSZ) was successfully synthesized via a reflux-
hydrothermal method. ZrOCl 2, NaOH and methanol were used as zirconium source …
hydrothermal method. ZrOCl 2, NaOH and methanol were used as zirconium source …
Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory
Z Tang, R Li, X Zhang, H Geng, S Zang… - Semiconductor …, 2018 - iopscience.iop.org
Charge trap memory devices with Zr x Si 1–x O 2 films as charge trapping layer consisting of
nine [(ZrO 2) m (SiO 2) n (ZrO 2) m (SiO 2) n] units have been fabricated and investigated …
nine [(ZrO 2) m (SiO 2) n (ZrO 2) m (SiO 2) n] units have been fabricated and investigated …