Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4× 10
16–7.16× 10 17 cm− 3 was studied in longitudinal magnetic field 0–14 T in the temperature …

The study of the magnetoresistance in InSb whiskers with an impurity concentration in the
vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in …

Magnetoresistance of GaAs whiskers with concentrations in the vicinity to metal-insulator
transition (MIT) 1017–1018 cm− 3 were studied at low temperatures and high magnetic …

The temperature dependences of resistance for the p-type conductivity solid solution silicon–
germanium whiskers doped by boron with concentration of 1× 10 18 cm− 3 were …

The effects of geometric features of p-type Si1–xGex (x= 0.01-0.05) whiskers on their
thermoelectric properties have been studied. Oblique whiskers of various diameters (10-100 …

UI characteristics of Si nanowires were investigated. At current exceeding 10 µΑ, voltage
oscillations run with frequency of about 1 Hz. The oscillations are very similar by amplitude …

Thermoelectric properties of Si 1-x Ge x (x= 0.03) solid solution whiskers doped with B
impurities to the concentrations 10 17–10 19 cm-3 were studied in temperature range 300 …

Studies of the effects of strain and elemental composition on thermoelectric properties of
SiGe microwires for sensor applications at the influence of strong magnetic fields have been …

The paper deals with studies of thermoelectric properties for Si 1-x Ge x (x= 0.01-0.05)
whiskers doped with boron during their growth by CVD method. Temperature dependences …

The present paper aims to study an effect of compression strain (up to ε= 3· 10-4) on
behavior of transverse magnetoresistance of InSb whiskers at cryogenic temperatures under …