A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Synaptic electronics: materials, devices and applications

D Kuzum, S Yu, HSP Wong - Nanotechnology, 2013 - iopscience.iop.org
In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological
synaptic plasticity and learning are described. The material properties and electrical …

Emerging neuromorphic devices

D Ielmini, S Ambrogio - Nanotechnology, 2019 - iopscience.iop.org
Artificial intelligence (AI) has the ability of revolutionizing our lives and society in a radical
way, by enabling machine learning in the industry, business, health, transportation, and …

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

[HTML][HTML] Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

D Ielmini - Microelectronic Engineering, 2018 - Elsevier
The human brain can perform advanced computing tasks, such as learning, recognition, and
cognition, with extremely low power consumption and low frequency of neuronal spiking …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Electrochemical metallization memories—fundamentals, applications, prospects

I Valov, R Waser, JR Jameson, MN Kozicki - Nanotechnology, 2011 - iopscience.iop.org
This review focuses on electrochemical metallization memory cells (ECM), highlighting their
advantages as the next generation memories. In a brief introduction, the basic switching …

Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.

R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

[HTML][HTML] High switching endurance in TaOx memristive devices

JJ Yang, MX Zhang, JP Strachan, F Miao… - Applied Physics …, 2010 - pubs.aip.org
We demonstrate over 1× 10 10 open-loop switching cycles from a simple memristive device
stack of Pt/TaO x/Ta⁠. We compare this system to a similar device stack based on titanium …

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

A Mehonic, AL Shluger, D Gao, I Valov… - Advanced …, 2018 - Wiley Online Library
Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …