Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Seed particles of elements or compounds which may or may not form alloys are now used
extensively in promoting well-controlled nanowire growth. The technology has evolved …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

The diffusion barriers of Ga and N adatoms on the nonpolar a-and m-plane surfaces have
been studied employing density-functional theory calculations. Our calculations reveal a …

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase
epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches …

The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted
molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous …

Semiconductor nanowires composed of III–V materials have enormous potential to add new
functionality to electronics and optical applications. However, integration of these promising …

On Si (1 1 1) and Si (0 0 1), GaN nanowires (NWs) form in a self-induced way without the
need for any external material. On sapphire, NW growth is induced by Ni collectors. Both …

An arrangement of self-assembled GaN nanowires (NWs) grown by plasma-assisted
molecular beam epitaxy on a Si (111) substrate is studied as a function of the temperature at …