Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Fully depleted SOI (FDSOI) technology
K Cheng, A Khakifirooz - Science China Information Sciences, 2016 - Springer
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS
scaling to 22 nm node and beyond but also for improving the performances of legacy …
scaling to 22 nm node and beyond but also for improving the performances of legacy …
Multi- UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
This paper analyzes the potential of fully depleted silicon-on-insulator (FDSOI) technology
as a multiple threshold voltage VT platform for digital circuits compatible with bulk …
as a multiple threshold voltage VT platform for digital circuits compatible with bulk …
BSIM—SPICE models enable FinFET and UTB IC designs
Two turn-key surface potential-based compact models are developed to simulate multigate
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
[图书][B] Compact models for integrated circuit design: conventional transistors and beyond
SK Saha - 2015 - library.oapen.org
This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
[图书][B] FinFET devices for VLSI circuits and systems
SK Saha - 2020 - taylorfrancis.com
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …
as the real alternative for use as the next generation device for IC fabrication technology …
Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications
S Makovejev, BK Esfeh, V Barral, N Planes… - Solid-State …, 2015 - Elsevier
This work presents an in-depth wide-frequency band assessment of 28 nm FDSOI MOSFETs
for analogue and RF applications. The focus is mainly on such figures of merit (FoM) as the …
for analogue and RF applications. The focus is mainly on such figures of merit (FoM) as the …
Low-frequency noise sources in advanced UTBB FD-SOI MOSFETs
CG Theodorou, EG Ioannidis, F Andrieu… - … on Electron Devices, 2014 - ieeexplore.ieee.org
The low-frequency noise (LFN) sources in ultrathin body (8.7 nm) and buried oxide (10 nm)
fully depleted silicon-on-insulator (UTBB FD-SOI) n-and p-channel MOSFETs are analyzed …
fully depleted silicon-on-insulator (UTBB FD-SOI) n-and p-channel MOSFETs are analyzed …
SOI technologies for RF and millimeter-wave applications
This chapter presents an overview of silicon-on-insulator (SOI) technology for radio-
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies
This paper presents a vertical gate-all-around nanowire FET (VFET) architecture targeting
5nm and beyond technologies, and a new standard-cell construct for digital flow …
5nm and beyond technologies, and a new standard-cell construct for digital flow …