Highly linear wide band low noise amplifiers: A literature review (2010–2018)
Wideband (WB) CMOS low noise amplifier (LNA) design requires linearity consideration for
better performance across the entire band because the increase in the number of interferers …
better performance across the entire band because the increase in the number of interferers …
A broadband Low Noise Amplifier with built-in linearizer in 0.13-µm CMOS process
H Rastegar, JY Ryu - Microelectronics Journal, 2015 - Elsevier
A linearized ultra-wideband (UWB) CMOS Low Noise Amplifier (LNA) is presented in this
paper. The linearity performance is enhanced by exploiting PMOS–NMOS common-gate …
paper. The linearity performance is enhanced by exploiting PMOS–NMOS common-gate …
Survey on parameter optimization of mobile communication band low noise amplifier design
AA Roobert, DGN Rani - … of RF and Microwave Computer‐Aided …, 2019 - Wiley Online Library
A comparative study on recent works on low noise amplifiers (LNAs) designed to be
operated at mobile communication band is performed in this article. Here, specifications of …
operated at mobile communication band is performed in this article. Here, specifications of …
A 0.6 V, low‐power and high‐gain ultra‐wideband low‐noise amplifier with forward‐body‐bias technique for low‐voltage operations
A two‐stage common‐source (CS) low‐noise amplifier (LNA) that uses a forward‐body‐bias
technique in N‐type metal–oxide semiconductor devices and intended to achieve a high …
technique in N‐type metal–oxide semiconductor devices and intended to achieve a high …
A high linearity low power low-noise amplifier designed for ultra-wide-band receivers
BD Yaghouti, J Yavandhasani - Analog Integrated Circuits and Signal …, 2021 - Springer
This paper presents a new ultra-wide band (UWB) CMOS low noise amplifier (LNA) with
very high linearity and low power consumption for UWB wireless communication …
very high linearity and low power consumption for UWB wireless communication …
A 0.65 V, linearized cascade UWB LNA by application of modified derivative superposition technique in 130 nm CMOS technology
In this paper, a low-voltage linearized ultra-wideband (UWB) low noise amplifier (LNA) is
presented. The core of the proposed circuit is a two-stage cascade structure which is forward …
presented. The core of the proposed circuit is a two-stage cascade structure which is forward …
Gm-boosted current-reuse inductive-peaking common source LNA for 3.1–10.6 GHz UWB wireless applications in 32 nm CMOS
A low power, low noise amplifier (LNA) for 3.1–10.6 GHz ultra-wideband (UWB) wireless
applications is reported in this paper. The proposed LNA is designed using common source …
applications is reported in this paper. The proposed LNA is designed using common source …
A low power and high gain CMOS LNA for UWB applications in 90 nm CMOS process
This paper presents a two stage low noise amplifier (LNA) to achieve low power and high
gain for 3.1–10.6 GHz ultra-wide band (UWB) applications. Its first stage yields exceptionally …
gain for 3.1–10.6 GHz ultra-wide band (UWB) applications. Its first stage yields exceptionally …
Design and analysis of wideband low‐power LNA for improved RF performance with compact chip area
Here, a wideband low‐noise amplifier (LNA) based on the two‐stage cascade configuration
is presented to improve the radiofrequency (RF) performance. With the common gate (CG) …
is presented to improve the radiofrequency (RF) performance. With the common gate (CG) …
A 3–14 GHz, self-body biased common-gate UWB LNA for wireless applications in 90 nm CMOS
Inspired from continuous growth in the field of low power and low noise wireless
communication devices, a low noise amplifier (LNA) using self-body biased common-gate …
communication devices, a low noise amplifier (LNA) using self-body biased common-gate …