Two-dimensional field-effect transistor sensors: the road toward commercialization
C Dai, Y Liu, D Wei - Chemical Reviews, 2022 - ACS Publications
The evolutionary success in information technology has been sustained by the rapid growth
of sensor technology. Recently, advances in sensor technology have promoted the …
of sensor technology. Recently, advances in sensor technology have promoted the …
Roadmap of terahertz imaging 2021
In this roadmap article, we have focused on the most recent advances in terahertz (THz)
imaging with particular attention paid to the optimization and miniaturization of the THz …
imaging with particular attention paid to the optimization and miniaturization of the THz …
On the integration of enabling wireless technologies and sensor fusion for next-generation connected and autonomous vehicles
The automotive industry is transitioning towards intelligent, connected, and autonomous
vehicles to avoid traffic congestion, conflicts, and collisions with increased driver safety …
vehicles to avoid traffic congestion, conflicts, and collisions with increased driver safety …
A hydrogen‐sensitive Pd‐gate MOS transistor
KI Lundström, MS Shivaraman… - Journal of Applied …, 1975 - pubs.aip.org
An n‐channel MOS transistor with palladium gate was fabricated. The threshold voltage of
this transistor was found to depend on the partial pressure of hydrogen in the ambient …
this transistor was found to depend on the partial pressure of hydrogen in the ambient …
[HTML][HTML] Semiconductor technologies for 5G implementation at millimeter wave frequencies–Design challenges and current state of work
Almost all cellular mobile communications of today take place in sub 3 GHz band that has
now become too crowded to support future demands of increasing mobile data traffic …
now become too crowded to support future demands of increasing mobile data traffic …
Emerging terahertz integrated systems in silicon
Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the
past decade. The demonstrated basic component performance, as well as the maturity of …
past decade. The demonstrated basic component performance, as well as the maturity of …
Inverse Altermagnetic Spin Splitting Effect‐Induced Terahertz Emission in RuO2
Y Liu, H Bai, Y Song, Z Ji, S Lou… - Advanced Optical …, 2023 - Wiley Online Library
The relativistic inverse spin Hall effect (ISHE) plays a pivotal role in terahertz (THz) emission
in magnet/heavy metal bilayers. Here, THz emission from RuO2/Py bilayers is reported due …
in magnet/heavy metal bilayers. Here, THz emission from RuO2/Py bilayers is reported due …
InP-based THz beam steering leaky-wave antenna
For mobile THz applications, integrated beam steering THz transmitters are essential. Beam
steering approaches using leaky-wave antennas (LWAs) are attractive in that regard since …
steering approaches using leaky-wave antennas (LWAs) are attractive in that regard since …
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz
We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin
architecture with a record THz, a simultaneous GHz, and V. The resulting THz-V is …
architecture with a record THz, a simultaneous GHz, and V. The resulting THz-V is …
- and -Band Millimeter-Wave GaN MMICs
This paper gives an overview of published results with GaN MMICs for millimeter-wave front
ends at frequencies above 60 GHz, including power and low-noise amplifiers, switches …
ends at frequencies above 60 GHz, including power and low-noise amplifiers, switches …