An 8–16 GHz SiGe low noise amplifier with performance tuning capability for mitigation of radiation-induced performance loss

DC Howard, PK Saha, S Shankar… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
We present a wideband, low noise amplifier (LNA) implemented in a Silicon-Germanium
Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA covers a frequency …

A 1–27 GHz SiGe low noise amplifier with 27 dB peak gain and 2.85±1.45 dB NF

Z Wang, J Chen, D Hou, P Zhou, Z Chen… - … on Circuits and …, 2024 - ieeexplore.ieee.org
This brief presents an ultra-wideband (UWB) low-noise amplifier (LNA) with a 3-dB gain
bandwidth (BW) from 1 to 27 GHz (185.7% fractional BW). The resistive-feedback and …

The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks

AS Youssouf, MH Habaebi, NF Hasbullah - IEEE Access, 2021 - ieeexplore.ieee.org
This paper provides the details of a study on the effects of electron irradiation on two Low
Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility …

Highly linear wideband LNA design using inductive shunt feedback

NH Jeong, CS Cho, S Min - JSTS: Journal of Semiconductor …, 2014 - koreascience.kr
Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to
operate at wide frequency bands for various wireless system applications. For wideband …

Analysis of electrothermal effects in bipolar differential pairs

V d'Alessandro, L La Spina, LK Nanver… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
An extensive experimental and theoretical analysis of bipolar differential pairs subject to
radical electrothermal feedback is presented. Measurements demonstrate that considerable …

A 9.96 mW 3.24±0.5 dB NF 1.9∼ 22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology

YS Lin, CC Wang, JH Lee - 2014 IEEE Radio and Wireless …, 2014 - ieeexplore.ieee.org
A 1.9~ 22.5 GHz wideband LNA based on the current-reused cascade configuration in 90
nm CMOS is reported. The wideband input-impedance matching was achieved by taking …

Millimeter-Wave Receiver with Ultra-Broad Tuning Range in SiGe BiCMOS Process

H Abdeen - 2023 - oparu.uni-ulm.de
This research work presents the implementation of a 10–40 GHz ultra-wideband receiver
frontend with an ultra-broad tuning range in a state-of-the-art Si/SiGe SG13S BiCMOS …

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

SB Reyaz, R Malmqvist, A Gustafsson… - IET Microwaves …, 2015 - Wiley Online Library
This study presents the results of a high‐gain and wideband differential intermediate
frequency (IF) amplifier circuit design for a W‐band passive imaging single‐chip (down …

A 6~ 18GHz Ultra-Wideband LNA Using 0.13 μm SiGe BiCMOS Technology

W He, Z Li, Y Yao, Y Xue, Q Li - 2018 14th IEEE International …, 2018 - ieeexplore.ieee.org
An Ultra-Wideband low-noise amplifier LNA designed in 0.13 μm SiGe BiCMOS technology
is presented in this paper. The inductive peaking technology is adopted to expand the …

Wideband low‐noise amplifier design using the LC‐ladder and capacitive shunt–shunt feedback topology

M Weststrate, S Sinha - Microwave and Optical Technology …, 2011 - Wiley Online Library
The LC‐ladder and capacitive shunt–shunt feedback topology has been identified as a
potential candidate for the implementation of wideband low‐noise amplifiers. This article …