In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

GeSn is predicted to exhibit an indirect to direct band gap transition at alloy Sn composition
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …

We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge
multiple-quantum-well (MQW) pin photodiode, exhibiting a 3-dB bandwidth (f3-dB) above 10 …

The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …

The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si
heterostructures under annealing. We investigated strained and partially relaxed epi-layers …

We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0. 92Sn0.
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …

Growth and characterization of advanced group IV semiconductor materials with CMOS‐
compatible applications are demonstrated, both in photonics. The investigated …