Sol–gel indium–gallium–zinc oxide (IGZO) semiconductors are developed as active
components of thin‐film transistors (TFTs) because of their high electron mobility, cost …

Abstract Machine learning (ML) provides temporal advantage and performance
improvement in practical electronic device design by adaptive learning. Herein, Bayesian …

This paper proposes a new gate driver circuit using depletion mode a-IGZO TFTs. The
proposed gate driver circuit can prevent Q node, the gate node of pull-up TFT, from …

This paper presents a new bidirectional gate driver circuit that utilizes amorphous indium–
gallium–zinc oxide thin-film transistors (TFTs). To ensure the compactness of the display …

We propose a new gate driver circuit with an improved output pulse using depletion mode
amorphous indium gallium zinc oxide thin film transistors. The previous reported gate driver …

The asymmetrical degradation behaviors of amorphous indium–gallium–zinc oxide thin-film
transistors are studied comprehensively under various gate and drain bias stresses. The …

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver
circuits integrated using InGaZnO thin-film transistors (TFTs) were fabricated to achieve ultra …

In order to suppress the malfunction caused by the shift of the threshold voltage (VTH) of
oxide thin film transistors (TFTs) to a negative value, double-gate TFTs are used in the shift …

This paper proposes a new gate driver employing only a single negative power source,
which is integrated by In-Zn-O TFTs with an etch stop layer (ESL) structure. A negative …

A new gate driver composed of amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs)
is proposed. By turning off TFTs completely to suppress the leakage current and eliminating …