As semiconductor device scaling faces a severe technical bottleneck, vertical die stacking
technologies have been developed to obtain high performance, high density, low latency …

Wide range of choices are available for dielectric materials selection for hybrid bonding,
which include: thermal oxide, PECVD TEOS SiO2, SiN, SiCN and commercial polymer …

Achieving a void-free bonding interface is an important requirement for the wafer-to-wafer
direct bonding process. The two main potential mechanisms for void formation at the …

Hybrid bonding or surface activated bonding is becoming the technology to manufacture
higher density first-level interconnects by addressing pitch scaling difficulties of solder …

Due to nonmature wafer yield and customer demand for high-number die stacking, the chip-
to-wafer stacking process with only known good die is a preferred solution to advanced …

This letter describes the use of area-selective electroless Cu deposition for topography
control of Cu-SiCN hybrid bonding pads. The electroless deposition of Cu allows one to …

A newly developed temporary bonding method for die population on a carrier wafer with
CVD dielectric film has been demonstrated. With this integration approach, the temporary …

The main development challenge of low temperature hybrid bonding technology is the
oxidation of Cu surface. The schemes to achieve the high-quality surface condition of Cu …

Hybrid copper bonding technology (HCB) has been developed to reduce the joint gap of
stacked chips to the limit for miniaturization of I/O pitch and high heat dissipation. Especially …

Hybrid bonding has become the key technology to enabling high density interconnect
interfaces for fine pitch integration through the direct bonding of dielectrics followed by the …