Defect complexes have a significant impact on the structural, electronic, optical and
electrical properties of semiconductors. Several defect complexes formed by n-type and p …

Titanium trisulfide monolayer (TiS 3) is a quasi-1D crystal with promising applications in a
range of fields, including photoelectrochemical cells and thermoelectrics. Despite the …

Defect-complexes are point defects that significantly influence the geometric, optical, and
electrical properties of materials. Defect-complexes are known to improve the electronic and …

Density functional theory (DFT) with the Heyd-Scuseria-Ernzerhof hybrid functional was
used to predict the structure, formation energy, stability and the charge state transition …

Impurities play a major role in identifying the most enhanced defect-levels induced in 4H–
SiC. Among the important n-and p-type dopants in SiC are the P and Al, respectively. The P …

Electrically active induced energy levels in semiconductor devices could be beneficial to the
discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is …

We present results of the structural, energetic and electronic properties of rare earth (RE)
interstitial-complexes in Ge (RE Ge Ge i; for RE: Ce, Pr, Eu, Er and Tm). We used the Heyd …

Studies of substitutional impurities in 4H-SiC play a major role in identifying the most
enhanced defect levels induced. N and B substitution in 4H-SiC on separate studies reveal …