On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A TURUT - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer
This paper reviews the microstructural and electrical properties of Au/n-GaN
metal/semiconductor (MS) diode with an e-beam evaporated SrTiO 3 (STO) as an insulating …
metal/semiconductor (MS) diode with an e-beam evaporated SrTiO 3 (STO) as an insulating …
Annealing temperature effect on structural, electronic features and current transport process of Au/CoPc/undoped-InP MPS-type Schottky structure
VR Reddy, AU Rani, S Ashajyothi, DS Reddy… - Journal of Molecular …, 2023 - Elsevier
The influence of annealing on structural, electronic features and the current transport
process of the Au/CoPc/undoped-InP (MPS)-type structure is explored. Raman …
process of the Au/CoPc/undoped-InP (MPS)-type structure is explored. Raman …
Modification of interface properties of Au/n-GaN Schottky junction by rare-earth oxide Nd2O3 as an interlayer and its microstructural characterization
We demonstrate the impact of rare-earth Nd 2 O 3 interlayer on the electrical properties of
Au/n-GaN Schottky junction (SJ), the Au/Nd 2 O 3/n-type GaN metal/interlayer …
Au/n-GaN Schottky junction (SJ), the Au/Nd 2 O 3/n-type GaN metal/interlayer …
Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode
Difluoro-4-bora-3a, 4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was
synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were …
synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were …
Thermal sensitivity from current-voltage-measurement temperaturecharacteristics in Au/n-GaAs Schottky contacts
A Turut - Turkish Journal of Physics, 2021 - journals.tubitak.gov.tr
We have measured the current? voltage-temperature (IVT) characteristics of the Au/n-
GaAs/In Schottky barrier diodes (SBDs) to introduce their thermal sensitivity mechanism. The …
GaAs/In Schottky barrier diodes (SBDs) to introduce their thermal sensitivity mechanism. The …
Modification of barrier diode with cationic dye for high power applications
Current-voltage (IV) measurements of Au/methylene blue (MB)/p-Si/Al diode were taken at
room temperature, in the dark and under illumination and also in a wide temperature range …
room temperature, in the dark and under illumination and also in a wide temperature range …
The synthesis and photoelectrical performances of perylenediimide-based devices as an interface layer in metal-organic-semiconductors
The symmetric and asymmetric perylenediimide (PDI)-based organic ligands Ph-PDI-Ph (1),
Pyr-PDI-Pyr (2), and Pyr-PDI-Ph (3) were synthesized. Au/(Pyr-PDI-Ph)/p-Si (D1), and …
Pyr-PDI-Pyr (2), and Pyr-PDI-Ph (3) were synthesized. Au/(Pyr-PDI-Ph)/p-Si (D1), and …
Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation
The current–voltage characteristics of Au/SnO2/n-Si Schottky diode before and after
irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The …
irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The …
Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing
Abstract Ni/n-GaP/Al Schottky diodes have been fabricated and thermally annealed at 400°
C to obtain Schottky rectifying contacts with optimum performance and improve …
C to obtain Schottky rectifying contacts with optimum performance and improve …