With the problems of resource consumption and environmental harm, increasing attention
has been paid to the conversion and storage of energy. The development of flexible …

Many research is underway in the semiconductor industry. Conventional MOSFETs are
getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) …

Induction Barrier Lowering (DIBL) is observed when high dielectric constant material is used
as gate oxide of the junctionless double gate (JLDG) MOSFET. For this purpose, an …

In this paper, an attempt has been made to get high drive current (ION) for tunnel FETs by
comparing conventional double gate tunnel field effect transistor (DG-TFET) with double …

Junctionless transistor (JLT) is known for improved short channel effects (SCE) and hence
better scalability, and high temperature advantages, in addition that it offers more convenient …

In this paper, physics-based capacitance model has been developed for horizontal floating
gate field effect transistor (H-FGFET). The horizontal design of floating gate (FG) FET allows …

In this work, the electrical characteristics of n-type cylindrical gate all around (GAA) nanowire
junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed …

A novel tunneling field effect transistor (TFET) with a recess channel is proposed. Proposed
TFET has a thin intrinsic region and it is formed in the shape of surrounding the gate. The …

The variation of the on-off current ratio is investigated when the asymmetrical junctionless
double gate MOSFET is fabricated as a SiO2/high-k dielectric stacked gate oxide. The high …

In this paper, we perform self-consistent field relaxation and electronic structure calculations
of tetragonal B 3 N 3 based on density functional theory, using LDA pseudopotential in the …