Dynamic reliability management in neuromorphic computing

S Song, J Hanamshet, A Balaji, A Das… - ACM Journal on …, 2021 - dl.acm.org
Neuromorphic computing systems execute machine learning tasks designed with spiking
neural networks. These systems are embracing non-volatile memory to implement high …

Disturbance characteristics of 1T DRAM arrays consisting of feedback field-effect transistors

J Jeon, K Cho, S Kim - Micromachines, 2023 - mdpi.com
Challenges in scaling dynamic random-access memory (DRAM) have become a crucial
problem for implementing high-density and high-performance memory devices. Feedback …

A compact artificial spiking neuron using a sharp-switching FET with ultra-low energy consumption down to 0.45 fJ/spike

Y Chen, K Xiao, Y Qin, F Liu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
In this article, we first utilize a zero subthreshold swing and zero impact ionization FET (Z2-
FET) as an innovative artificial spiking neuron and demonstrate it with CMOS-compatible …

A review of sharp-switching band-modulation devices

S Cristoloveanu, J Lacord, S Martinie, C Navarro… - Micromachines, 2021 - mdpi.com
This paper reviews the recently-developed class of band-modulation devices, born from the
recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body …

Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors

J Son, J Jeon, K Cho, S Kim - Nanomaterials, 2024 - mdpi.com
In this study, we demonstrate the generation and storage of random voltage values using a
ring oscillator consisting of feedback field-effect transistors (FBFETs). This innovative …

Electrical stability of p-channel feedback field-effect transistors under bias stresses

J Son, K Cho, S Kim - IEEE Access, 2021 - ieeexplore.ieee.org
In this study, we examined electrical stability of the p-channel feedback field-effect
transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The …

Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

H Heo, Y Shin, J Son, S Ryu, K Cho, S Kim - Nanotechnology, 2024 - iopscience.iop.org
In this study, we investigate the gate-bias stability of triple-gated feedback field-effect
transistors (FBFETs) with Si nanosheet channels. The subthreshold swing (SS) of FBFETs …

Enhanced transient behavior in MIS (p) tunnel diodes by trench forming at the gate edge

JY Lin, JG Hwu - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, a new type of metal-insulator-semiconductor (MIS) tunnel diode (TD), trench
MIS TD, was investigated. From the current-voltage characteristics, memory retention, and …

A New Compact Z-FET Model Based on Artificial Neural Network and Its Applications

C Liu, Y Chen, S Cristoloveanu, P Zhou… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The-FET is a compact device fabricated using fully depleted silicon-on-insulator (FD-SOI)
technology, and it operates with band-modulation mechanism. Due to its sharp-switching …

A Photosensitive Spiking Neuron Using a Single Band-Modulation Device With Tunable Spiking Sensitivity

Y Chen, C Liu, T Tian, H Xie… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Bio-inspired visual systems require a critical component to perceive optical stimuli and
convert them into spiking signals. In this study, a compact photosensitive spiking neuron is …