Piezoelectric MEMS—Evolution from sensing technology to diversified applications in the 5G/Internet of Things (IoT) era
The rapid development of the fifth-generation mobile networks (5G) and Internet of Things
(IoT) is inseparable from a large number of miniature, low-cost, and low-power sensors and …
(IoT) is inseparable from a large number of miniature, low-cost, and low-power sensors and …
Nanoelectromechanical relay without pull-in instability for high-temperature non-volatile memory
Emerging applications such as the Internet-of-Things and more-electric aircraft require
electronics with integrated data storage that can operate in extreme temperatures with high …
electronics with integrated data storage that can operate in extreme temperatures with high …
Toward monolithically integrated hybrid CMOS-NEM circuits
U Sikder, K Horace-Herron, TT Yen… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Nanoelectromechanical (NEM) switches offer the advantages of zero OFF-state leakage
current, abrupt switching characteristics, nonvolatile (NV) operation, and relatively low ON …
current, abrupt switching characteristics, nonvolatile (NV) operation, and relatively low ON …
Nonvolatile nanoelectromechanical memory switches for low-power and high-speed field-programmable gate arrays
YJ Kim, WY Choi - IEEE Transactions on Electron Devices, 2014 - ieeexplore.ieee.org
The application of nanoelectromechanical (NEM) memory switches to field-programmable
gate arrays (FPGAs) has been proposed for the first time. NEM memory switches replace …
gate arrays (FPGAs) has been proposed for the first time. NEM memory switches replace …
Non-Volatile Nano-Electro-Mechanical Switches and Hybrid Circuits in a 16 nm CMOS Back-End-of-Line Process
Reprogrammable non-volatile (NV) vertically-oriented nano-electro-mechanical (NEM)
switches with a compact footprint are successfully implemented using multiple back-end-of …
switches with a compact footprint are successfully implemented using multiple back-end-of …
All metal nanoelectromechanical switch working at 300° C for rugged electronics applications
An all metal based electrostatic nanoelectromechanical switch has been fabricated using a
one mask process. High temperature cycling behavior is demonstrated in a vacuum …
one mask process. High temperature cycling behavior is demonstrated in a vacuum …
Wafer‐Scale CMOS‐Compatible Electro‐Thermally Actuated Nanomechanical Non‐Volatile Switch with Out‐of‐Plane Electrode Configuration
YB Lee, PK Choi, MH Kang, SH Kim… - Advanced Electronic …, 2024 - Wiley Online Library
The rapid growth of data‐intensive applications has significantly heightened the concerns
about power consumption in current computing systems. From this perspective, there have …
about power consumption in current computing systems. From this perspective, there have …
Highly Reliable Nanoelectrothermal Non-Volatile Memory with CMOS-level Voltage and Low On-State Resistance
YB Lee, PK Choi, MH Gang, SH Kim… - 2024 IEEE 37th …, 2024 - ieeexplore.ieee.org
This paper reports a highly reliable nanoelectrothermal non-volatile memory (NET-NVM)
with complementary metal-oxide-semiconductor (CMOS)-level voltage and low on-state …
with complementary metal-oxide-semiconductor (CMOS)-level voltage and low on-state …
New Nonvolatile Static Memory Cell based on Nanoelectromechanical Device
M Choi, H Kim, Y Kim - 2021 International Conference on …, 2021 - ieeexplore.ieee.org
The application of nanoelectromechanical (NEM) memory switches to memory cell has been
proposed. This memory cell has a nonvolatile property. The memory cell can be designed by …
proposed. This memory cell has a nonvolatile property. The memory cell can be designed by …
Active Region Formation of Nanoelectromechanical (NEM) Devices for Complementary-Metal-Oxide-Semiconductor-NEM Co-Integration
TM Cha, HC Jo, HS Kwon… - Journal of Nanoscience …, 2019 - ingentaconnect.com
Considering the isotropic release process for nanoelectromechanical (NEM) devices,
defining the specific sacrificial layer of the inter-metal-dielectric (IMD), ie, the active region …
defining the specific sacrificial layer of the inter-metal-dielectric (IMD), ie, the active region …