EA Jones, P Williford, F Wang - 2017 IEEE 5th Workshop on …, 2017 - ieeexplore.ieee.org
A fast overcurrent protection scheme was developed for GaN gate injection transistors (GITs), harnessing the relationship between the externally measured vgs and id in steady …
Y Shi, W Chen, X Cui, M Li, C Liu, Y Xia… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, the effects of repetitively transient overcurrent on the long-term reliability of commercial p-GaN high-electron-mobility-transistors (HEMTs) are investigated by using …
P Williford, F Wang, S Bala, J Xu - 2019 IEEE 7th Workshop on …, 2019 - ieeexplore.ieee.org
The short-circuit robustness of 600 V/30 A GaN gate injection transistors (GITs) was evaluated under various operating conditions to determine the worst-case short-circuit …
S Sudhakar, SN Joshi, JA Weibel - Applied Thermal Engineering, 2021 - Elsevier
Vapor chambers are being increasingly utilized as passive heat spreaders in various high- power density thermal management architectures. Particularly, in applications involving …
Abstract Gallium Nitride (GaN) power devices are an emerging technology that have only become available commercially in the past few years. This new technology enables the …
X Jiang, J Chen, S Yuan, Z Yan, X Gong… - 2024 IEEE 10th …, 2024 - ieeexplore.ieee.org
This paper investigates ohmic gate P-GaN HEMTs' overcurrent capabilities and the associated failure mechanisms through single pulse overcurrent conduction stress …
Abstract Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has become one of the most attractive power transistors in recent years due to its superior electrical and thermal …
Abstract [eng] The use of ultrasound in non-invasive research and measurements is a common practice in material science. To generate ultrasound ultrasonic transducers are …
In diesem Projekt ging es um die Lösung von Problemen beim Aufbau eines LIDAR- Systems nach dem Real Time-of-Flight-Ansatz, bei dem die Laufzeit eines extrem kurzen …