An overview of GaN FET technology, reliability, radiation and market for future space application

M Carbone, K Hirche, S Morand… - 2019 European …, 2019 - ieeexplore.ieee.org
GaN technology has gained interest and is becoming widely commercially available due to
their superior performances in power conversion applications. The paper shall promote the …

A fast overcurrent protection scheme for GaN GITs

EA Jones, P Williford, F Wang - 2017 IEEE 5th Workshop on …, 2017 - ieeexplore.ieee.org
A fast overcurrent protection scheme was developed for GaN gate injection transistors
(GITs), harnessing the relationship between the externally measured vgs and id in steady …

Investigation on the long-term reliability of high-voltage p-GaN HEMT by repetitively transient overcurrent

Y Shi, W Chen, X Cui, M Li, C Liu, Y Xia… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, the effects of repetitively transient overcurrent on the long-term reliability of
commercial p-GaN high-electron-mobility-transistors (HEMTs) are investigated by using …

Short circuit study of 600 V GaN GITs

P Williford, F Wang, S Bala, J Xu - 2019 IEEE 7th Workshop on …, 2019 - ieeexplore.ieee.org
The short-circuit robustness of 600 V/30 A GaN gate injection transistors (GITs) was
evaluated under various operating conditions to determine the worst-case short-circuit …

Investigation of boiling behaviors in vapor chambers in response to transient heat input profiles

S Sudhakar, SN Joshi, JA Weibel - Applied Thermal Engineering, 2021 - Elsevier
Vapor chambers are being increasingly utilized as passive heat spreaders in various high-
power density thermal management architectures. Particularly, in applications involving …

Characterization methodology, modeling, and converter design for 600 V enhancement-mode GaN FETs

EA Jones - 2018 - trace.tennessee.edu
Abstract Gallium Nitride (GaN) power devices are an emerging technology that have only
become available commercially in the past few years. This new technology enables the …

Characterization and Failure Mechanism Study of Ohmic Gate GaN HEMT under Overcurrent Stress

X Jiang, J Chen, S Yuan, Z Yan, X Gong… - 2024 IEEE 10th …, 2024 - ieeexplore.ieee.org
This paper investigates ohmic gate P-GaN HEMTs' overcurrent capabilities and the
associated failure mechanisms through single pulse overcurrent conduction stress …

Short circuit capability and degradation mechanism analysis of e-mode GaN HEMT

X Li - 2017 - rave.ohiolink.edu
Abstract Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has become one of
the most attractive power transistors in recent years due to its superior electrical and thermal …

Investigation of high voltage pulsers for ultrasound

T Žaromskis - 2021 - epubl.ktu.edu
Abstract [eng] The use of ultrasound in non-invasive research and measurements is a
common practice in material science. To generate ultrasound ultrasonic transducers are …

[PDF][PDF] Advancing time-of-flight technology for high performance light detection and ranging

M Wahl - 2022 - edocs.tib.eu
In diesem Projekt ging es um die Lösung von Problemen beim Aufbau eines LIDAR-
Systems nach dem Real Time-of-Flight-Ansatz, bei dem die Laufzeit eines extrem kurzen …