Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …

Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

The resistance state of filamentary memristors can be tuned by relocating only a few atoms
at interatomic distances in the active region of a conducting filament. Thereby the technology …

We investigate the low-frequency noise (LFN) characteristics of resistive switching random
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …

Write-variability and resistance instability are major reliability concerns impeding
implementation of oxide-based memristive devices in neuromorphic systems. The root …

Nanodevices that show the potential for non-linear transformation of electrical signals and
various forms of memory can be successfully used in new computational paradigms, such as …

Chalcogenide resistive switches (RS), such as Ag2S, change resistance due to the growth of
metallic filaments between electrodes along the electric field gradient. Therefore, they are …

The structure of the electron current through an individual filament of a nanometer-sized
virtual memristor consisting of a contact of a conductive atomic force microscope probe to an …

The commercial introduction of a novel electronic device is often preceded by a lengthy
material optimization phase devoted to the suppression of device noise as much as …

Graphene nanogaps are considered as essential building blocks of two-dimensional
electronic circuits, as they offer the possibility to interconnect a broad range of atomic-scale …