Emerging technologies, such as smart wearable devices, augmented reality (AR)/virtual
reality (VR) displays, and naked-eye 3D projection, have gradually entered our lives …

GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal
quantum efficiency with increasing injection current. This droop phenomenon is currently the …

The history of development for gallium-nitride-based light-emitting diodes (LEDs) is
reviewed. We identify two broad developments in GaN-based LED technology: first, the key …

Over the past decade, advances in LEDs have enabled the potential for wide-scale
replacement of traditional lighting with solid-state light sources. If LED performance targets …

Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

The paper reviews applications of ABC-model to interpret internal quantum efficiency and its
droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and …

This work examines the effects of polarization-related electric fields on the energy band
diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum …