We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs
(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the …

Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …

Taking into account an infinite confinement potential, including the influence of external
electric field applied in different directions, we have systematically examined the different …

Long distance entanglement distribution is an important problem for quantum information
technologies to solve. Current optical schemes are known to have fundamental limitations. A …

We present here an atomistic theory of the electronic and optical properties of hexagonal
InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum …

Entangled photon sources are crucial for quantum optics, quantum sensing, and quantum
communication. Semiconductor quantum dots generate on-demand entangled photon pairs …

Theory of exciton fine structure in semiconductor quantum dots and its dependence on
quantum-dot anisotropy and external lateral electric field is presented. The effective exciton …

A systematic study of the emission spectra of single InAsP nanowire quantum dots in
position-controlled InP photonic nanowire waveguides is presented. Using excitation power …

We control the electrostatic environment of a single InAsP quantum dot in an InP nanowire
with two contacts and two lateral gates positioned to an individual nanowire. We empty the …

Single GaN/Al (Ga) N quantum dots (QDs) have been investigated by means of
microphotoluminescence. Emission spectra related to excitons and biexcitons have been …