Results of a Monte Carlo study of carrier multiplication in silicon bipolar and field‐effect
transistors and of electron injection into silicon dioxide are presented. Qualitative and, in …

A tunneling escape rate 1/τ T of electrons from a single quantum well through thin barriers
was successfully determined by measurement and analysis of the lifetime τ e of electrons …

The present work investigates the effect of the Gamma-X crossover at low temperatures on
the donor binding energies in single-quantum-well (QW) microstructures. It is found that, at a …

A new resonant tunneling process is discussed theoretically. The process relies on elastic
intervalley transfers between different band minima, eg, between Γ and X minima in a GaAs …

One of the most exciting quantum mechanical phenomena in semiconductorphysics is the
tunneling process ofelectronsthroughpotentialbarriers. As is shown in a variety of …

The effective-mass approximation is extended so as to take into account mixings between Γ
and X conduction-band valleys at heterointerfaces consisting of Al x Ga 1− x As with different …

We have observed resonant tunneling of electrons in AIAs-GaAs-AIAs heterostructures, via a
quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the …

The interface between two one-dimensional crystals is studied with the use of the transfer
matrix. This microscopic approach allows a study of the accuracy of the effective-mass …

We have investigated the energies of the electronic states of GaAs/Al x Ga 1− x As strongly
coupled double quantum wells and uncoupled multiple quantum wells as functions of …

The effective-mass method (EMM) has been widely used for the description of layered
semiconductor structures with sharp boundaries (quantum wells, superlattices, etc.) …