A comparative study of Si, Ge and GaAs cylindrical nanowire transistors with non equilibrium Greens function approach
V Gupta, RS Gupta, RK Singh - Journal of Computational and …, 2014 - ingentaconnect.com
In this paper we compare the electrical behavior of Silicon (Si), Germanium (Ge) and
Gallium Arsenide (GaAs) nanowire surrounding gate field effect transistors for high …
Gallium Arsenide (GaAs) nanowire surrounding gate field effect transistors for high …
AgNO3-dependent morphological change of si nanostructures prepared by single-step metal assisted etching method
T Shimizu, T Yamaguchi, F Inoue… - Japanese Journal of …, 2012 - iopscience.iop.org
The morphological changes of a nanostructured Si surface prepared by metal assisted
etching were investigated. We used a mixture of silver nitrate (AgNO 3) and hydrofluoric acid …
etching were investigated. We used a mixture of silver nitrate (AgNO 3) and hydrofluoric acid …
Control of crystal orientation and diameter of silicon nanowire using anodic aluminum oxide template
T Shimizu, F Inoue, C Wang, S Otsuka… - Japanese Journal of …, 2013 - iopscience.iop.org
The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires
was demonstrated using a combination of a vapor–liquid–solid (VLS) growth technique and …
was demonstrated using a combination of a vapor–liquid–solid (VLS) growth technique and …
Comparative study of dopant-segregated Schottky barrier germanium nanowire transistors
YB Zhang, L Sun, H Xu, YQ Xia, Y Wang… - Japanese Journal of …, 2014 - iopscience.iop.org
P-type Schottky barrier Ge nanowire transistors modulated with dopant segregated regions
are proposed and studied. The impact of dopant segregated regions on device performance …
are proposed and studied. The impact of dopant segregated regions on device performance …