GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Here we report InGaN-based red light-emitting diodes (LEDs) grown on ($\bar {2} 01$) β-Ga
2 O 3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well …

Red LEDs were grown by metalorganic chemical vapor deposition with a high active region
temperature of 870 C on a relaxed InGaN/GaN superlattice buffer. The buffer was 100 …

Recently, many groups have focused on the development of GaN-based green LDs to meet
the demand for laser display. Great progresses have been achieved in the past few years …

A highly relaxed InGaN buffer layer was demonstrated over a full two-inch c-plane sapphire
substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on …

The compliant behavior of high fill-factor 10× 10 μm 2 square patterned 60–140 nm thick
GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible …

In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …

We demonstrate direct green laser operation from InGaN based diodes at wavelengths as
long as 515.9 nm with 50 mW output power in pulse operation. A factor of∼ 10 defect …