Organic–inorganic hybrid lead halide perovskites have shown extraordinary potentials in
space photovoltaic technology and high‐energy‐rays detection but their practical …

Irradiation damage is a key issue for the reliability of semiconductor devices under extreme
environments. For decades, the ionizing‐irradiation‐induced damage in transistors with …

Neutron and γ-ray irradiation damages to transistors are found to be non-additive, and this is
denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The …

A defect dynamic model is proposed for the positive synergistic effect of neutron-and γ-ray-
irradiated silicon NPN transistors. The model considers a γ-ray-induced transformation and …

The practical damage of silicon bipolar devices subjected to mixed ionization and
displacement irradiations is usually evaluated by the sum of separated ionization and …

The performance of Gamma-ray irradiated silicon devices usually deteriorates due to the
total ionizing dose (TID) effect. The common belief is that the TID mainly involves the change …

The individual and mixed radiation experiments of gamma rays and neutrons were
performed to evaluate the irradiation synergistic effects (ISEs) of ionizing dose and …

The interaction mechanism between displacement damage and ionization damage in SiO2
layer has been researched on gate-controlled lateral pnp transistor (GLPNP). The …

Ionizing‐irradiation of Si electronic devices usually occurs under variable dose rate
environments such as in the outer space. It is generally accepted that the defect dynamics in …

The silicon bipolar junction transistor (Si BJT) is widely used as a discrete device, but it is
susceptible to damage from both ionization and displacement in nuclear radiation …