Fully vertical GaN pin diodes using GaN-on-Si epilayers
Using GaN-on-Si epilayers, for the first time, fully vertical pin diodes are demonstrated after
Si substrate removal, transfer, and n-electrode formation at the top of the device. After SiO 2 …
Si substrate removal, transfer, and n-electrode formation at the top of the device. After SiO 2 …
High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings
This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage
vertical GaN pn diodes grown on bulk GaN substrates by metalorganic chemical vapor …
vertical GaN pn diodes grown on bulk GaN substrates by metalorganic chemical vapor …
820-V GaN-on-Si quasi-vertical pin diodes with BFOM of 2.0 GW/cm2
In this letter, we demonstrate GaN-on-Si pin diodes with high breakdown voltage and state-
of-the-art Baliga's figure of merit (BFOM) among GaN-on-Si vertical devices. The growth and …
of-the-art Baliga's figure of merit (BFOM) among GaN-on-Si vertical devices. The growth and …
1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy
High-voltage vertical regrown pn junction diodes on bulk GaN substrates are reported in this
letter with molecular-beam-epitaxy regrown p-GaN on metalorganic-chemical-vapor …
letter with molecular-beam-epitaxy regrown p-GaN on metalorganic-chemical-vapor …
Fully-and quasi-vertical GaN-on-Si pin diodes: High performance and comprehensive comparison
We report growth and fabrication of fully-and quasi-vertical GaN-on-Si pin diodes. A record
high Baliga figure of merit of 304 and 152 MW/cm 2 is reported for fully-and quasi-vertical …
high Baliga figure of merit of 304 and 152 MW/cm 2 is reported for fully-and quasi-vertical …
Breakdown ruggedness of quasi-vertical GaN-based pin diodes on Si substrates
This letter reports the breakdown ruggedness of GaN-based quasi-vertical pin diodes on Si
for the first time. With a 2μm-thick drift layer, the 0.08-mm 2 devices can sustain a surge …
for the first time. With a 2μm-thick drift layer, the 0.08-mm 2 devices can sustain a surge …
Suppression of current leakage along mesa surfaces in GaN-based pin diodes
BS Zheng, PY Chen, CJ Yu, YF Chang… - IEEE Electron …, 2015 - ieeexplore.ieee.org
Trifluoromethane-containing plasma is used to passivate the mesa surfaces and suppresses
the surface leakage current of GaN pin rectifiers. Reduction of surface leakage enhances the …
the surface leakage current of GaN pin rectifiers. Reduction of surface leakage enhances the …
Temperature-dependent characteristics of GaN homojunction rectifiers
We report a homojunction gallium nitride (GaN) pin rectifier fabricated on free-standing GaN
substrates with the breakdown voltage 800 V and low specific ON-resistance (R ON A). At …
substrates with the breakdown voltage 800 V and low specific ON-resistance (R ON A). At …
Using two-step mesa to prevent the effects of sidewall defects on the GaN pin diodes
YF Chang, CL Liao, BS Zheng, JZ Liu… - IEEE Journal of …, 2015 - ieeexplore.ieee.org
In this paper, the two-step mesas of quasi-vertical GaN pin diodes grown on pattern
sapphire substrates (PSSs) with a 3-μm i-layer were defined by two-step dry etching to …
sapphire substrates (PSSs) with a 3-μm i-layer were defined by two-step dry etching to …
Steady State and Transient Thermal Characterization of Vertical GaN PIN Diodes
In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire
substrate and compare the results to GaN PIN diodes grown on a free standing GaN …
substrate and compare the results to GaN PIN diodes grown on a free standing GaN …