Terahertz photoconductive antenna based on a topological insulator nanofilm

KA Kuznetsov, DA Safronenkov, PI Kuznetsov… - Applied Sciences, 2021 - mdpi.com
In this study, the efficient generation of terahertz radiation by a dipole photoconductive
antenna, based on a thin island film of a topological insulator, was experimentally …

Improved InGaAs and InGaAs/InAlAs photoconductive antennas based on (111)-oriented substrates

K Kuznetsov, A Klochkov, A Leontyev, E Klimov… - Electronics, 2020 - mdpi.com
The terahertz wave generation by spiral photoconductive antennas fabricated on low-
temperature In0. 5Ga0. 5As films and In0. 5Ga0. 5As/In0. 5Al0. 5As superlattices is studied …

THz radiation of photoconductive antennas based on {LT-GaAa/GaAa: Si} superlattice structures

AN Klochkov, EA Klimov, PM Solyankin… - Optics and …, 2020 - Springer
A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on
(111) A-oriented substrates is proposed for fabrication of THz photoconductive antennas …

Терагерцовое излучение фотопроводящих антенн на основе сверхрешеточных структур LT-GaAs/GaAs:Si

АН Клочков, ЕА Климов, ПМ Солянкин… - Оптика и …, 2020 - mathnet.ru
Предложен материал в виде многослойной структуры на основе низкотемпературного
LT-GaAs, выращенного на подложках с ориентацией (111) А, для изготовления …

Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP (100) and InP (111) A Substrates

GB Galiev, AL Vasiliev, IS Vasil'evskii… - Crystallography …, 2020 - Springer
The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam
epitaxy (MBE) at a temperature of 200° C on InP substrates with the crystallographic …

[PDF][PDF] Prospective Materials for Photoconductive Antennas for Terahertz Generation

N Arora - Journal of Innovation and Social Science Research … - scholar.archive.org
Photoconductive antenna (PCA) is a widely known device for terahertz generation and
detection. Since the 1980s, several variants for PCA substrate materials and antenna design …

[HTML][HTML] СТРУКТУРНЫЕ ОСОБЕННОСТИ ПЛЕНОК INXGA1-XAS, ВЫРАЩЕННЫХ С МЕТАМОРФНЫМ БУФЕРОМ НА РАЗНООРИЕНТИРОВАННЫХ …

ЮА Волковский, МС Фоломешкин… - Успехи в химии и …, 2022 - cyberleninka.ru
Представлены результаты рентгенодифракционного исследования эпитаксиальных
пленок In0. 53Ga0. 47As, выращенных на подложках GaAs с кристаллографическими …

Generation of terahertz radiation in antennas based on epitaxial films of semiconductors and topological insulators

KA Kuznetsov, PI Kuznetsov, GB Galiev… - AIP Conference …, 2021 - pubs.aip.org
The terahertz (THz) wave generation by photoconductive antennas fabricated on the low-
temperature and hightemperature grown In0. 5Ga0. 5As semiconductor and Bi2-xSbxTe3 …

Photoconductive terahertz antennas based on topological insulators Bi2−xSbxTe3−ySey

K Kuznetsov, P Kuznetsov… - 2020 7th All-Russian …, 2020 - ieeexplore.ieee.org
The paper presents the results of a study of terahertz radiating antennas made on the base
of island films of topological insulators of bismuth and antimony chalcogenides. It has been …

Структурные характеристики эпитаксиальных сверхрешеток {InGaAs/InAlAs}, выращенных в низкотемпературном режиме на подложках InP (100) и (111) А

ГБ Галиев, АЛ Васильев, ИС Васильевский… - …, 2020 - elibrary.ru
Исследованы структурные характеристики сверхрешеток {InGaAs/InAlAs}, выращенных
методом молекулярно-лучевой эпитаксии при температуре 200 С на подложках InP с …