[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy
Z Gačević, D Gomez Sanchez, E Calleja - Nano letters, 2015 - ACS Publications
This work provides experimental evidence and theoretical explanations regarding the
formation mechanisms of GaN nanowires grown by selective area growth on GaN-on …
formation mechanisms of GaN nanowires grown by selective area growth on GaN-on …
GaN nanowires grown by molecular beam epitaxy
KA Bertness, NA Sanford… - IEEE Journal of selected …, 2010 - ieeexplore.ieee.org
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed.
These properties include the absence of residual strain, exclusion of most extended defects …
These properties include the absence of residual strain, exclusion of most extended defects …
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
T Schumann, T Gotschke, F Limbach, T Stoica… - …, 2011 - iopscience.iop.org
GaN nanowires (NWs) were grown selectively in holes of a patterned silicon oxide mask, by
rf-plasma-assisted molecular beam epitaxy (PAMBE), without any metal catalyst. The oxide …
rf-plasma-assisted molecular beam epitaxy (PAMBE), without any metal catalyst. The oxide …
Polarity-controlled GaN/AlN nucleation layers for selective-area growth of GaN nanowire arrays on Si (111) substrates by molecular beam epitaxy
MD Brubaker, SM Duff, TE Harvey… - Crystal Growth & …, 2016 - ACS Publications
We have demonstrated dramatic improvement in the quality of selective-area GaN nanowire
growth by controlling the polarity of the underlying nucleation layers. In particular, we find …
growth by controlling the polarity of the underlying nucleation layers. In particular, we find …
Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy
K Kishino, T Hoshino, S Ishizawa, A Kikuchi - Electronics Letters, 2008 - IET
The selective-area growth (SAG) of GaN nanocolumns by RF-plasma-assisted molecular-
beam epitaxy is demonstrated by the use of Ti mask patterns on (111) Si substrates. At the …
beam epitaxy is demonstrated by the use of Ti mask patterns on (111) Si substrates. At the …
Defect reduction in GaN/(0001) sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
D Cherns, L Meshi, I Griffiths, S Khongphetsak… - Applied Physics …, 2008 - pubs.aip.org
Transmission and scanning electron microscopies are used to examine the epitaxial lateral
overgrowth of GaN on GaN nanocolumns grown on AlN/(0001) sapphire by molecular beam …
overgrowth of GaN on GaN nanocolumns grown on AlN/(0001) sapphire by molecular beam …
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
KD Goodman, VV Protasenko, J Verma… - Journal of Applied …, 2011 - pubs.aip.org
Indium gallium nitride nanowires show promise as being prime candidates for optical
devices since they can be grown with band gaps spanning the visible spectra, while at the …
devices since they can be grown with band gaps spanning the visible spectra, while at the …
Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy
In this study, selective area growth (SAG) s of AlGaN/GaN nanowires (NWs) on miscut N-
polar GaN templates were studied and compared with that grown on Ga-polar templates …
polar GaN templates were studied and compared with that grown on Ga-polar templates …