Germanium based field-effect transistors: Challenges and opportunities

PS Goley, MK Hudait - Materials, 2014 - mdpi.com
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …

Fermi-level pinning and charge neutrality level in germanium

A Dimoulas, P Tsipas, A Sotiropoulos… - Applied physics …, 2006 - pubs.aip.org
The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work
function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S …

Mobility enhancement technology for scaling of CMOS devices: overview and status

Y Song, H Zhou, Q Xu, J Luo, H Yin, J Yan… - Journal of electronic …, 2011 - Springer
The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS)
technology to the sub-21-nm technology node is facing great challenges. Innovative …

Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance

DP Brunco, B De Jaeger, G Eneman… - Journal of The …, 2008 - iopscience.iop.org
Germanium possesses higher electron and hole mobilities than silicon. There is a big leap,
however, between these basic material parameters and implementation for high …

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

Y Zhou, M Ogawa, X Han, KL Wang - Applied Physics Letters, 2008 - pubs.aip.org
Due to the strong Fermi-level pinning close to the germanium (Ge) valence band edge, all
metal/p-type Ge contacts show Ohmic characteristics, while metal/n-type Ge contacts exhibit …

Dangling-bond defects and hydrogen passivation in germanium

JR Weber, A Janotti, P Rinke… - Applied Physics …, 2007 - pubs.aip.org
The application of germanium in complementary metal-oxide semiconductor technology is
hampered by high interface-state densities. Using first-principles calculations, we investigate …

Growth of highly tensile-strained Ge on relaxed InxGa1− xAs by metal-organic chemical vapor deposition

Y Bai, KE Lee, C Cheng, ML Lee… - Journal of Applied …, 2008 - pubs.aip.org
Highly tensile-strained Ge thin films and quantum dots have the potential to be implemented
for high mobility metal-oxide-semiconductor field-effect transistor channels and long …

Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

G Mavrou, S Galata, P Tsipas, A Sotiropoulos… - Journal of Applied …, 2008 - pubs.aip.org
Germanium metal-insulator-semiconductor capacitors with La 2 O 3 dielectrics deposited at
high temperature or subjected to post deposition annealing show good electrical …

Modeling of negatively charged states at the Ge surface and interfaces

P Tsipas, A Dimoulas - Applied Physics Letters, 2009 - pubs.aip.org
Modeling based on surface charge neutrality predicts that the Ge surface tends to be p-type,
irrespective of the bulk conductivity. This is a consequence of the fact that the Ge band gap …

Ge dangling bonds at the (100) Ge/GeO2 interface and the viscoelastic properties of GeO2

M Houssa, G Pourtois, M Caymax, M Meuris… - Applied Physics …, 2008 - pubs.aip.org
The electronic energy band structure of a (100) Ge/GeO 2 interface with a Ge 3≡ Ge• center
(Ge dangling bond) is calculated using the density functional theory. The defect level …