A Dimoulas, P Tsipas, A Sotiropoulos… - Applied physics …, 2006 - pubs.aip.org
The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S …
Y Song, H Zhou, Q Xu, J Luo, H Yin, J Yan… - Journal of electronic …, 2011 - Springer
The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS) technology to the sub-21-nm technology node is facing great challenges. Innovative …
DP Brunco, B De Jaeger, G Eneman… - Journal of The …, 2008 - iopscience.iop.org
Germanium possesses higher electron and hole mobilities than silicon. There is a big leap, however, between these basic material parameters and implementation for high …
Y Zhou, M Ogawa, X Han, KL Wang - Applied Physics Letters, 2008 - pubs.aip.org
Due to the strong Fermi-level pinning close to the germanium (Ge) valence band edge, all metal/p-type Ge contacts show Ohmic characteristics, while metal/n-type Ge contacts exhibit …
The application of germanium in complementary metal-oxide semiconductor technology is hampered by high interface-state densities. Using first-principles calculations, we investigate …
Y Bai, KE Lee, C Cheng, ML Lee… - Journal of Applied …, 2008 - pubs.aip.org
Highly tensile-strained Ge thin films and quantum dots have the potential to be implemented for high mobility metal-oxide-semiconductor field-effect transistor channels and long …
G Mavrou, S Galata, P Tsipas, A Sotiropoulos… - Journal of Applied …, 2008 - pubs.aip.org
Germanium metal-insulator-semiconductor capacitors with La 2 O 3 dielectrics deposited at high temperature or subjected to post deposition annealing show good electrical …
Modeling based on surface charge neutrality predicts that the Ge surface tends to be p-type, irrespective of the bulk conductivity. This is a consequence of the fact that the Ge band gap …
The electronic energy band structure of a (100) Ge/GeO 2 interface with a Ge 3≡ Ge• center (Ge dangling bond) is calculated using the density functional theory. The defect level …