Applications of Monolayer‐Functionalized H‐Terminated Silicon Surfaces: A Review

J Veerbeek, J Huskens - Small Methods, 2017 - Wiley Online Library
Silicon is an attractive semiconductor material for wide‐ranging applications, from
electronics and sensing to solar cells. Functionalization of H‐terminated silicon surfaces with …

Doping of semiconductors by molecular monolayers: monolayer formation, dopant diffusion and applications

L Ye, MP de Jong, T Kudernac, WG van der Wiel… - Materials science in …, 2017 - Elsevier
The continuous miniaturization in the semiconductor industry brings electronic devices with
higher performance at lower cost. The doping of semiconductor materials plays a crucial role …

[HTML][HTML] Germanium monolayer doping: successes and challenges for the next generation Ge devices

F Sgarbossa - Materials Science in Semiconductor Processing, 2023 - Elsevier
The growing interest in nanoelectronics and photonics, combined with the development of
new germanium-based devices, provide the impetus to develop new doping methods …

Monolayer doping of silicon through grafting a tailored molecular phosphorus precursor onto oxide-passivated silicon surfaces

T Alphazan, L Mathey, M Schwarzwalder… - Chemistry of …, 2016 - ACS Publications
Monolayer doping (MLD) of silicon substrates at the nanoscale is a powerful method to
provide controlled doses of dopants and defect-free materials. However, this approach …

Control of Doping Level in Semiconductors via Self-Limited Grafting of Phosphorus End-Terminated Polymers

M Perego, G Seguini, E Arduca, A Nomellini… - ACS …, 2018 - ACS Publications
An effective bottom-up technology for precisely controlling the amount of dopant atoms
tethered on silicon substrates is presented. Polystyrene and poly (methyl methacrylate) …

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

M Perego, F Caruso, G Seguini, E Arduca… - Journal of Materials …, 2020 - pubs.rsc.org
An effective doping technology for the precise control of P atom injection and activation into
a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular …

Synthesis and characterization of P δ-layer in SiO2 by monolayer doping

E Arduca, M Mastromatteo, D De Salvador… - …, 2016 - iopscience.iop.org
Achieving the required control of dopant distribution and selectivity for nanostructured
semiconducting building block is a key issue for a large variety of applications. A promising …

Chemical approaches for doping nanodevice architectures

J O'Connell, S Biswas, R Duffy, JD Holmes - Nanotechnology, 2016 - iopscience.iop.org
Advanced doping technologies are key for the continued scaling of semiconductor devices
and the maintenance of device performance beyond the 14 nm technology node. Due to …

Advances in ultrashallow doping of silicon

C Zhang, S Chang, Y Dan - Advances in Physics: X, 2021 - Taylor & Francis
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

Monolayer doping of Si with improved oxidation resistance

J O'Connell, G Collins, GP McGlacken… - … Applied Materials & …, 2016 - ACS Publications
In this article, the functionalization of planar silicon with arsenic-and phosphorus-based
azides was investigated. Covalently bonded and well-ordered alkyne-terminated …