We review epitaxial formation, basic properties, and device applications of a novel type of
nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots …

▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

Subcells includes an epitaxially grown self-assembled quan tum dot material. The subcells
are electrically connected via tunnel junctions. Each of the subcells has an effective band …

We describe the initial efforts to use molecular beam epitaxy to grow InAs quantum dots on
GaAs via the Stranski–Krastanov transition and then discuss the initial efforts to use these …

The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …

We present a comparative study of carrier diffusion in semiconductor heterostructures with
different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and …

The influence of high energy proton irradiation on the device properties of InGaAs/GaAs
quantum dot and quantum well lasers has been investigated. In the regime of spontaneous …

Semiconductor laser diodes (LDs), with merits of little volume, lightweight, low power
consumption, ease of modulation, and high data rates, are great candidates for space laser …