Quantum-dot semiconductor optical amplifiers

T Akiyama, M Sugawara, Y Arakawa - Proceedings of the IEEE, 2007 - ieeexplore.ieee.org
This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers
developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed …

Femtosecond all-optical devices for ultrafast communication and signal processing

O Wada - New Journal of Physics, 2004 - iopscience.iop.org
Future bandwidth demand in optical communication and signal processing systems will
soon exceed 100 Gb s− 1 as is commonly forecasted from a throughput experience curve for …

Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

M Sugawara, H Ebe, N Hatori, M Ishida, Y Arakawa… - Physical Review B, 2004 - APS
This work presents a theory of optical signal amplification and processing by quantum-dot
semiconductor optical amplifiers (SOA's) based on the density matrix equations to treat …

Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s− 1 directly modulated lasers and 40 …

M Sugawara, N Hatori, M Ishida, H Ebe… - Journal of Physics D …, 2005 - iopscience.iop.org
This paper presents recent progress in the field of semiconductor lasers and optical
amplifiers with InAs-based self-assembled quantum dots in the active region for optical …

[图书][B] Microwave photonics

CH Lee - 2006 - taylorfrancis.com
Wireless, optical, and electronic networks continue to converge, prompting heavy research
into the interface between microwave electronics, ultrafast optics, and photonic …

[HTML][HTML] Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

A Lundskog, CW Hsu, K Fredrik Karlsson… - Light: Science & …, 2014 - nature.com
Semiconductor quantum dots (QDs) have been demonstrated viable for efficient light
emission applications, in particular for the emission of single photons on demand. However …

One-dimensional miniband formation in closely stacked InAs/GaAs quantum dots

A Takahashi, T Ueda, Y Bessho, Y Harada, T Kita… - Physical Review B …, 2013 - APS
We have studied the electronic states of closely stacked InAs/GaAs quantum dots (QDs) with
a 4.0-nm spacer layer using linearly polarized photoluminescence (PL) and time-resolved …

Artificial control of optical gain polarization by stacking quantum dot layers

T Kita, N Tamura, O Wada, M Sugawara… - Applied physics …, 2006 - pubs.aip.org
Polarization insensitivity of In As∕ Ga As quantum dot (QD) optical amplifier has been
demonstrated by controlling the dot shape. The height of the QD has been controlled by …

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

M Usman, T Inoue, Y Harda, G Klimeck, T Kita - Physical Review B …, 2011 - APS
Recent experimental measurements, without any theoretical guidance, showed that isotropic
polarization response can be achieved by increasing the number of quantum-dot (QD) …

Polarization-insensitive quantum dot semiconductor optical amplifiers using strain-controlled columnar quantum dots

N Yasuoka, H Ebe, K Kawaguchi… - Journal of lightwave …, 2011 - ieeexplore.ieee.org
A polarization-insensitive quantum dot semiconductor optical amplifiers (QD-SOAs) have
been studied for use in future optical communication systems. A part of our work shows that …