Generalized Lorenz–Mie theories and description of electromagnetic arbitrary shaped beams: localized approximations and localized beam models, a review

G Gouesbet, JA Lock, G Gréhan - Journal of Quantitative Spectroscopy and …, 2011 - Elsevier
The description of electromagnetic arbitrary shaped beams (eg laser beams) under
expanded forms requires the evaluation of expansion coefficients known as beam shape …

Silicon nanocrystals: fundamental theory and implications for stimulated emission

VA Belyakov, VA Burdov, R Lockwood… - Advances in Optical …, 2008 - Wiley Online Library
Silicon nanocrystals (NCs) represent one of the most promising material systems for light
emission applications in microphotonics. In recent years, several groups have reported on …

Synthesis, Characterization of Fe-doped TiO2 Nanotubes with High Photocatalytic Activity

L Deng, S Wang, D Liu, B Zhu, W Huang, S Wu… - Catalysis Letters, 2009 - Springer
Fe-doped titanate nanotubes were prepared by the combination of sol–gel process with
hydrothermal treatment. After a further calcinations process, Fe-doped TiO 2 nanotubes …

Perspective on Solid‐State Single‐Photon Sources in the Infrared for Quantum Technology

S Castelletto, A Boretti - Advanced Quantum Technologies, 2023 - Wiley Online Library
Solid‐state single‐photon sources in the infrared region are crucial for advancing quantum
technologies, in particular long‐distance fiber or on‐chip quantum communication, quantum …

Generalized Lorenz–Mie theories, the third decade: a perspective

G Gouesbet - Journal of Quantitative Spectroscopy and Radiative …, 2009 - Elsevier
During the year 2008, we have been commemorating, in several places, the hundredth
anniversary of the famous 1908-paper by Mie describing the interaction between an …

[图书][B] Silicon nanophotonics: basic principles, present status, and perspectives

L Khriachtchev - 2016 - books.google.com
Photonics is a key technology of this century. The combination of photonics and silicon
technology is of great importance because of the potentiality of coupling electronics and …

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

P Lu, W Mu, J Xu, X Zhang, W Zhang, W Li, L Xu… - Scientific reports, 2016 - nature.com
Doping in semiconductors is a fundamental issue for developing high performance devices.
However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so …

First-principles study of 2.2 nm silicon nanocrystals doped with boron

X Pi, X Chen, D Yang - The Journal of Physical Chemistry C, 2011 - ACS Publications
First-principles study of boron (B)-doped silicon nanocrystals (Si NCs) at 0 K in the
framework of density functional theory has been carried out. It is found that B prefers residing …

Doping of silicon nanocrystals

E Arduca, M Perego - Materials Science in Semiconductor Processing, 2017 - Elsevier
Over the last decades silicon nanocrystals (Si NCs) were the subject of an intense research
activity, due to their optical and electronic properties. Different experimental approaches …

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

I Marri, E Degoli, S Ossicini - Progress in Surface Science, 2017 - Elsevier
Si nanocrystals have been extensively studied because of their novel properties and their
potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and …