Ultra-low power bias current generation and utilization in current and voltage source and regulator devices
AT Far - US Patent 10,198,022, 2019 - Google Patents
(57) ABSTRACT A bias current topology with embodiments in current source, current
reference,(pseudo bandgap) voltage reference, and bandgap voltage reference that operate …
reference,(pseudo bandgap) voltage reference, and bandgap voltage reference that operate …
A 0.9-V supply, 16.2 nW, fully MOSFET resistorless bandgap reference using sub-threshold operation
I Fakharyan, M Ehsanian, H Hayati - Analog Integrated Circuits and Signal …, 2020 - Springer
A nano-watt bandgap voltage reference (BGR) is presented. To provide a low-voltage and
low-power BGR, the circuit has been biased in the sub-threshold region; thereby, drawing a …
low-power BGR, the circuit has been biased in the sub-threshold region; thereby, drawing a …
Sub-1 V supply 5 nW 11 ppm/° C resistorless sub-bandgap voltage reference
In this work a resistorless sub-bandgap voltage reference topology is presented. It is a self-
biased and small area circuit that works in the nano-ampere consumption range, and under …
biased and small area circuit that works in the nano-ampere consumption range, and under …
EMI resisting MOSFET-only voltage reference based on ZTC condition
Electromagnetic interference (EMI) can significantly degrades the performance of analog
circuits, including voltage and current references, especially due to their limited power …
circuits, including voltage and current references, especially due to their limited power …
0.3 V supply, 17 ppm/° C 3-transistor picowatt voltage reference
AC de Oliveira, JG Caicedo… - 2016 IEEE 7th Latin …, 2016 - ieeexplore.ieee.org
In this work a novel resistorless MOSFET 3-transistor voltage reference that operates in the
picowatt range and occupies very small area is proposed. The circuit is based on a self …
picowatt range and occupies very small area is proposed. The circuit is based on a self …
0.7 V supply self-biased nanoWatt MOS-only threshold voltage monitor
This work presents a self-biased MOSFET threshold voltage V T0 monitor. The threshold
condition is defined based on a current-voltage relationship derived from a continuous …
condition is defined based on a current-voltage relationship derived from a continuous …
A sub-1V nanowatt CMOS bandgap voltage reference with temperature coefficient of 13ppm/° C
I Fakharyan, M Ehsanian - 2015 23rd Iranian Conference on …, 2015 - ieeexplore.ieee.org
In this work, a fully-MOSFET nanowatt bandgap voltage reference (BVR) is presented.
Biased in weak-inversion region, self-cascade composite transistors have been used in the …
Biased in weak-inversion region, self-cascade composite transistors have been used in the …
0.7 V supply, 8 nW, 8 ppm/° C resistorless sub-bandgap voltage reference
In this work a new resistorless sub-bandgap voltage reference topology is presented. It is a
self-biased and small area circuit that works in the nano-ampere consumption range, and …
self-biased and small area circuit that works in the nano-ampere consumption range, and …
Nano-watt 0.3 V supply resistorless voltage reference with Schottky diode
VR Campana, H Klimach… - 2016 IEEE 7th Latin …, 2016 - ieeexplore.ieee.org
The analysis and design of a resistorless sub-bandgap voltage reference using Schottky
diode and Low-VTo transistors is presented herein. The circuit is self-biased and works in …
diode and Low-VTo transistors is presented herein. The circuit is self-biased and works in …
1.5 ppm/° C nano-Watt resistorless MOS-only voltage reference
This paper presents a MOS-only high power supply rejection (PSRR) voltage reference with
a very low temperature coefficient (TC) that consumes only tens of nano-Watt. It is composed …
a very low temperature coefficient (TC) that consumes only tens of nano-Watt. It is composed …