The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
LED revolution: fundamentals and prospects for UV disinfection applications
The UV-light emitting diode (LED) has been attracting significant attention as a new UV
source that can replace conventional mercury gas-filled lamps in water disinfection …
source that can replace conventional mercury gas-filled lamps in water disinfection …
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
H Hirayama, N Maeda, S Fujikawa… - Japanese Journal of …, 2014 - iopscience.iop.org
In this paper, recent advances in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes
(LEDs) are demonstrated. 220–350-nm-band DUV LEDs have been realized by developing …
(LEDs) are demonstrated. 220–350-nm-band DUV LEDs have been realized by developing …
A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire
Y Nagasawa, A Hirano - Applied Sciences, 2018 - mdpi.com
Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
[HTML][HTML] A review on LED technology in water photodisinfection
M Martín-Sómer, C Pablos, C Adán… - Science of the Total …, 2023 - Elsevier
The increase in efficiency achieved by UV LED devices has led to a compelling increase in
research reports on UV LED water treatment for consumption in the past few years. This …
research reports on UV LED water treatment for consumption in the past few years. This …
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella - Reports on Progress in Physics, 2017 - iopscience.iop.org
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
[HTML][HTML] Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on doping and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …