Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-
based ultrathin layers, this family of materials continues to elicit interest. There is ample …

Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …

Metal oxide nanozymes have emerged as the most efficient and promising candidates to
mimic antioxidant enzymes for treatment of oxidative stress-mediated pathophysiological …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

To develop low-power, non-volatile computing-in-memory device using ferroelectric
transistor technologies, ferroelectric channel materials with scaled thicknesses are required …

Reversible control of ferroelectric polarization is essential to overcome the heterocatalytic
kinetic limitation. This can be achieved by creating a surface with switchable electron …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …