This article reports a comparative study of two artificial neural network structures and
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …

This paper explores and develops efficient temperature‐dependent small‐signal modeling
approaches for GaN high electron mobility transistors (HEMTs). The multilayer perceptron …

In this paper, an improved genetic algorithm-based hybrid direct-optimal extraction method
for small-signal model of GaN HEMT devices is proposed. Simulated annealing algorithm …

This article presents a high‐precision modeling method to build a small signal model of
GaAs pseudomorphic high electron mobility transistor (pHEMT) by using a radial basis …

Artificial neural network modeling techniques have been recognized as important vehicles in
the microwave computer‐aided design (CAD) area in addressing the growing challenges of …

Based on the GaN HEMT 20-element small-signal model, an improved particle swarm
algorithm is proposed in this paper for the optimization of the intrinsic parameters. The …

In this paper, a new modeling technique is proposed for extracting small-signal lumped-
element equivalent-circuit models for microwave transistors. The proposed procedure is …

This article proposes a new extraction technique to determine the GaN HEMT extrinsic
capacitances over a wide frequency band on two different substrates, namely, the silicon …

In this article, a new extraction technique is proposed to extract the small‐signal parameters
of gallium nitride (GaN) high electron mobility transistors (HEMTs) on three different …

Efficient transistor modeling is an essential step toward improved fabrication processes and
reliable circuit design. This puts more pressure on the model developer to consider the …