This review is devoted to one of the most promising two-dimensional (2D) materials,
graphene. Graphene can be prepared by different methods and the one discussed here is …

In this review the effect of the growth process on the formation of defects in the hetero-
epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our …

Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC
substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000° C …

We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a
sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled …

We report on the structural and electronic properties of graphene grown on SiC by high-
temperature sublimation. We have studied thickness uniformity of graphene grown on 4H …

Spectroscopic ellipsometry measurements in the visible to vacuum-ultraviolet spectra (3.5–
9.5 eV) are performed to determine the dielectric function of epitaxial graphene on SiC …

Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of
epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is …

The formation of crystalline and amorphous SiC films by single-composite target magnetron
sputter deposition process is demonstrated. In this process, graphite pieces were placed on …

Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed
with an emphasis on the enhanced understanding of polytype stability in relation to growth …

The nucleation of cubic (3C) SiC on on-axis 6H-SiC was investigated in the temperature
range 1500–1775° C by the technique of sublimation epitaxy. We have studied two different …