Defect related luminescence in silicon dioxide network: a review

R Salh - Crystalline Silicon-Properties and Uses, 2011 - books.google.com
The discovery of strong luminescence at room temperature from silicon cluster has attracted
an enormous attention in recent years due to its potential applications in Si-based …

Investigating the sources of low-energy events in a SuperCDMS-HVeV detector

MF Albakry, I Alkhatib, DWP Amaral, T Aralis… - Physical Review D, 2022 - APS
Recent experiments searching for sub-GeV/c 2 dark matter have observed event excesses
close to their respective energy thresholds. Although specific to the individual technologies …

Silicon nanocluster in silicon dioxide: cathodoluminescence, energy dispersive X-ray analysis and infrared spectroscopy studies

R Salh - Crystalline silicon-Properties and uses, 2011 - books.google.com
This chapter is extended to various electronical and optical modifications of amorphous
silica (a-SiO2) layers as they are applied in microelectronics, optoelectronics, as well as in …

Luminescence of silica glass containing aluminum oxide

AN Trukhin, JL Jansons, K Truhins - Journal of non-crystalline solids, 2004 - Elsevier
Optical properties of silica glass with different doping of Al2O3 up to 1.5 mol% were studied.
Alumina stimulates creation of a luminescence centers with specific band at 3.3 eV. A new …

Photo-induced phenomena in GeO2 glass

N Terakado, K Tanaka - Journal of Non-Crystalline Solids, 2006 - Elsevier
Photo-induced changes in GeO2 glass have been studied in terms of its optical and
structural properties. Band-gap excitation gives rise to modifications in mid-gap optical …

Cathodoluminescence of wet, dry, and hydrogen-implanted silica films

HJ Fitting, T Ziems, R Salh, MV Zamoryanskaya… - Journal of non …, 2005 - Elsevier
The main luminescent centers in SiO2 films are the red luminescence R (1.85 eV) of the non-
bridging oxygen hole center (NBOHC), a blue B (2.7 eV) band of the oxygen deficient …

Luminescent defects in nanostructured silica

VS Kortov, AF Zatsepin, SV Gorbunov… - Physics of the Solid …, 2006 - Springer
The spectral and kinetic properties of excited states of luminescent defects (oxygen-deficient
centers) in SiO 2 ceramics are studied using pulsed cathodoluminescence and time …

Radiation-induced secondary emissions in solid-state devices as a possible contribution to quasiparticle poisoning of superconducting circuits

F Ponce, JL Orrell, Z Wang - arXiv preprint arXiv:2301.08239, 2023 - arxiv.org
This report estimates the potential for secondary emission processes induced by ionizing
radiation to result in the generation of quasiparticles in superconducting circuits. These …

Short-lived excited states of oxygen-deficient centers in amorphous SiO2

A Zatsepin, VS Kortov, HJ Fitting - Journal of non-crystalline solids, 2005 - Elsevier
Samples of two pure silica glasses have been investigated by high-power pulsed
cathodoluminescence as well as by synchrotron-photoluminescence and …

Time-resolved photoluminescence of implanted SiO2: Si+ films

AF Zatsepin, VA Pustovarov, VS Kortov… - Journal of non …, 2009 - Elsevier
In this paper we present results of a low-temperature time-resolved photoluminescence (PL)
investigation of thin SiO2 films implanted with silicon ions. In addition to the luminescence of …