State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …
InP based devices for high speed applications. Over the past few decades, major aero …
A native oxide high-κ gate dielectric for two-dimensional electronics
Silicon-based transistors are approaching their physical limits and thus new high-mobility
semiconductors are sought to replace silicon in the microelectronics industry. Both bulk …
semiconductors are sought to replace silicon in the microelectronics industry. Both bulk …
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers
The heterogeneous integration of III–V devices with Si-CMOS on a common Si platform has
shown great promise in the new generations of electrical and optical systems for novel …
shown great promise in the new generations of electrical and optical systems for novel …
Almost perfectly symmetric SWCNT-based CMOS devices and scaling
Symmetric n-and p-type field-effect transistors (FETs) have been fabricated on the same
undoped single-walled carbon nanotube (SWCNT). The polarity of the FET is defined by …
undoped single-walled carbon nanotube (SWCNT). The polarity of the FET is defined by …
Effects of (NH4) 2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors
Planar and 3-dimensional (3D) buried-channel InGaAs metal-oxide-semiconductor field-
effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron …
effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron …
[HTML][HTML] Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) …
The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si)(001) substrate
with 6 off-cut using conventional germane precursor in a metal organic chemical vapour …
with 6 off-cut using conventional germane precursor in a metal organic chemical vapour …
Numerical evaluation of the effect of geometric tolerances on the high-frequency performance of graphene field-effect transistors
The interest in graphene-based electronics is due to graphene's great carrier mobility,
atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These …
atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These …
On the physical behavior of cryogenic IV and III–V Schottky barrier MOSFET devices
The physical influence of temperature down to the cryogenic regime is analyzed in a
comprehensive study and the comparison of IV and III-V Schottky barrier (SB) double-gate …
comprehensive study and the comparison of IV and III-V Schottky barrier (SB) double-gate …
Sub-50-nm MOSFETs With Various Barrier Layer Materials
Sub-50-nm In_0.7Ga_0.3As MOSFETs with high-k dielectric Al_2O_3 have been
demonstrated and investigated. The device performance of buried-channel In_0.7Ga_0.3As …
demonstrated and investigated. The device performance of buried-channel In_0.7Ga_0.3As …