This paper presents the results of comparative reliability study of two accelerated ageing
tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air–air test) …

This paper presents a synthesis of hot-electron effects on power RF LDMOS performances,
after accelerated ageing tests with electrical and/or thermal stress. Which can modify and …

This study presents firstly, experimental results through an innovative reliability bench of
pulsed RF life test in a radar application for device lifetime under pulse conditions, then the …

A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs
(LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier …

The electrical characteristics of semiconductors and especially the power components are
sensitive to temperature variation. Therefore, the thermal behaviour takes an essential place …

An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit
simulation purposes. The model takes into account electrical and thermal effects in a …

This paper treats the s‐parameter performance degradation by hot electron induced for N‐
MOSFET devices used in radar applications. This study is relevant for devices operating in …

This is a study of thermal effects on performance of N-channel power RF LDMOS devices,
under reliability bench of pulsed RF life test in a radar application from 10° C to 150° C. The …

The article presents the self-heating (SH) characterization and experimental validation of RF
bulk Lateral Double-Diffused Metal Oxide Semiconductor (LDMOS) transistor. It provides a …

This paper presents a synthesis of leakage current effects on N-MOSFET performances,
after thermal ageing in pulsed life tests. A 3000 h pulsed RF life test has been conducted on …